QEE113E3R0 Fairchild Optoelectronics Group, QEE113E3R0 Datasheet

no-image

QEE113E3R0

Manufacturer Part Number
QEE113E3R0
Description
LED IR GAAS SIDELOOK 940NM
Manufacturer
Fairchild Optoelectronics Group
Datasheet

Specifications of QEE113E3R0

Current - Dc Forward (if)
50mA
Radiant Intensity (ie) Min @ If
3mW/sr @ 100mA
Wavelength
940nm
Voltage - Forward (vf) Typ
1.5V
Viewing Angle
50°
Orientation
Side View
Mounting Type
Through Hole
Package / Case
Radial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
©2002 Fairchild Semiconductor Corporation
QEE113 Rev. 1.0.1
QEE113
Plastic Infrared Light Emitting Diode
Features
Package Dimensions
Notes:
1. Dimensions of all drawings are in inches (mm).
2. Tolerance is ±0.010 (0.25) on all non-nominal dimensions
Package Type = Sidelooker
Chip Material = GaAs
Matched Photosensor: QSE113
Medium Wide Emission Angle, 50°
Package Material: Clear Epoxy
High Output Power
Gray stripe on the top side
= 940nm
unless otherwise specified.
0.050 (1.27)
Ø0.095 (2.41)
0.020 (0.51) SQ.
0.087 (2.22)
CATHODE
PACKAGE DIMENSIONS
0.030 (0.76)
(2X)
0.100 (2.54)
0.175 (4.44)
0.100 (2.54)
NOM
ANODE
Ø0.065 (1.65)
0.500 (12.70)
0.200 (5.08)
MIN
Description
The QEE113 is a 940nm GaAs LED encapsulated in a
medium wide angle, plastic sidelooker package.
Schematic
CATHODE
ANODE
www.fairchildsemi.com
August 2008

Related parts for QEE113E3R0

QEE113E3R0 Summary of contents

Page 1

QEE113 Plastic Infrared Light Emitting Diode Features PACKAGE DIMENSIONS = 940nm Package Type = Sidelooker Chip Material = GaAs Matched Photosensor: QSE113 Medium Wide Emission Angle, 50° Package Material: Clear Epoxy High Output Power Gray stripe on the top side ...

Page 2

Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure ...

Page 3

Typical Performance Curves Fig. 1 Normalized Intensity vs. Wavelength 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 700 750 800 850 (nm) Fig. 3 Normalized Radiant Intensity vs. Forward Current 10 Normalized to 100mA Pulsed ...

Page 4

Typical Performance Curves Fig. 7 Radiation Diagram 90 100 110 120 130 140 150 160 170 180 1.0 0.8 0.6 0.4 0.2 0.0 ©2002 Fairchild Semiconductor Corporation QEE113 Rev. 1.0.1 (Continued) Fig. 8 Coupling Characteristics of QEE113 And QSE113 1.0 ...

Page 5

TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. Build it Now™ F-PFS™ FRFET CorePLUS™ CorePOWER™ Global ...

Related keywords