PDI-E900 Advanced Photonix Inc, PDI-E900 Datasheet

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PDI-E900

Manufacturer Part Number
PDI-E900
Description
EMITTER IR 940NM FULL BARE CHIP
Manufacturer
Advanced Photonix Inc
Datasheet

Specifications of PDI-E900

Current - Dc Forward (if)
100mA
Wavelength
940nm
Voltage - Forward (vf) Typ
1.3V
Orientation
Universal
Mounting Type
Surface Mount
Package / Case
0.013" Square x 0.008" (0.33mm Square x 0.2mm)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Viewing Angle
-
Radiant Intensity (ie) Min @ If
-
Other names
PT-PDI-E900
FEATURES
*1/16 inch from case for 3 secs max
PHOTONIC
DETECTORS INC.
ABSOLUTE MAXIMUM RATING
ELECTRO-OPTICAL CHARACTERISTICS
Information in this technical data sheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications
are subject to change without notice. Optical power and radiant intensity measured using uncapped dimpled TO-46 into integrating sphere.
SYMBOL
SYMBOL CHARACTERISTIC
High output power
High reliablity
Low degradation
To & Ts
100
8 0
6 0
4 0
2 0
TS
Pd
V
V
V
D D
I
I
P
0
C
FP
FP
t
t
O
P
r
f
R
F
R
t
FORWARD CURRENT, I
FORWARD CURRENT
POWER OUTPUT vs
Output Power
Forward Voltage
Reverse Breakdown Voltage
Peak Wavelength
Spectral Halfwidth
Terminal Capacitance
Rise Time
Fall Time
Power Dissipation
Continuous Forward Current
Peak Forward Current (10 s, 10Hz)
Reverse voltage
Storage & Operating Temperature
Soldering Temperature*
PARAMETER
F
(mA)
DESCRIPTION:
diode uses high reliability liquid phase epitaxially
grown GaAs. They are optimized for high power, high
efficiency, and low degradation.
(TA=25
PACKAGE DIMENSIONS inch (mm)
TEST CONDITIONS
1 0 0 0
1 0 0
1.0
10
I
I
I
I
I
V
I
I
0.1
O
F
F
F
F
F
F
F
The PDI-E900 infrared emitting
C unless otherwise noted)
= 20 mA
= 100 mA
= 10 µ µ A
= 100 mA
= 100 mA
R
= 100 mA
= 100 mA
= 0 V,f = 1 MHz
V
FORWARD CURRENT vs
(TA=25
F
- FORWARD VOLTAGE - (V)
FORWARD VOLTAGE
MIN
-65
Peak Wavelength 940
High-Power GaAs Infrared Emitter chip
O
C unless otherwise noted)
MAX
+125
160
100
N/A
2.5
5
MIN
920
1
5
UNITS
mW
mA
o
o
GOLD CONTACT
ANODE
GOLD CONTACT
CATHODE
A
V
C
C
TYP
1.30
940
0.013 [0.33] SQ
1.2
0.8
0.8
50
30
BOND PAD
CATHODE
Ø0.005 [Ø0.13]
nm,Type PDI-E900
0.008 [0.20]
APPLICATIONS
100
8 0
6 0
4 0
2 0
0
Photoelectric switches
Optical encoders
Infrared sources
WAVELENGTH, (nm)
SPECTRAL OUTPUT
MAX
1.50
960
UNITS
mW
µ µ S
m m S
nm
nm
pF
V
V

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