PDI-E901 Advanced Photonix Inc, PDI-E901 Datasheet

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PDI-E901

Manufacturer Part Number
PDI-E901
Description
EMITTER IR 940NM 80DEG TO-46
Manufacturer
Advanced Photonix Inc
Datasheet

Specifications of PDI-E901

Current - Dc Forward (if)
100mA
Wavelength
940nm
Voltage - Forward (vf) Typ
1.3V
Viewing Angle
160°
Orientation
Top View
Mounting Type
Through Hole
Package / Case
TO-46
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Radiant Intensity (ie) Min @ If
-
Other names
PT-PDI-E901
FEATURES
*1/16 inch from case for 3 secs max
PHOTONIC
DETECTORS INC.
ABSOLUTE MAXIMUM RATING
ELECTRO-OPTICAL CHARACTERISTICS
Information in this technical data sheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications
are subject to change without notice. Optical power and radiant intensity measured using uncapped dimpled TO-46 into integrating sphere.
SYMBOL
SYMBOL CHARACTERISTIC
Hermetically sealed
High reliablity
Wide emission angle
To & Ts
100
8 0
6 0
4 0
2 0
TS
Pd
V
V
V
D D
I
I
P
0
C
FP
FP
t
t
O
P
r
f
R
F
R
t
FORWARD CURRENT, I
FORWARD CURRENT
POWER OUTPUT vs
Output Power
Forward Voltage
Reverse Breakdown Voltage
Peak Wavelength
Spectral Halfwidth
Terminal Capacitance
Rise Time
Fall Time
Power Dissipation
Continuous Forward Current
Peak Forward Current (10 s, 10Hz)
Reverse voltage
Storage & Operating Temperature
Soldering Temperature*
PARAMETER
F
(mA)
DESCRIPTION:
diode uses high reliability liquid phase epitaxially
grown GaAs. Optimized for high power, high effi-
ciency. This 940 nm emitter is packaged in a TO-46
header with a flat glass window cap.
(TA=25
PACKAGE DIMENSIONS inch (mm)
TEST CONDITIONS
1 0 0 0
1 0 0
1.0
10
I
I
I
I
I
V
I
I
0.1
O
F
F
F
F
F
F
F
0.145 [3.68]
The PDI-E901 infrared emitting
C unless otherwise noted)
= 20 mA
= 100 mA
= 10 µ µ A
= 100 mA
= 100 mA
R
= 100 mA
= 100 mA
= 0 V,f = 1 MHz
V
FORWARD CURRENT vs
(TA=25
F
Ø0.212 [5.38]
Ø0.209 [5.31]
- FORWARD VOLTAGE - (V)
FORWARD VOLTAGE
MIN
-65
Peak Wavelength 940
L C
BOTTOM SIDE ANODE
0.013 [0.33] SQ
Ø0.005 [ Ø0.13]
CATHODE
[1.02]
0.040
O
C unless otherwise noted)
45°
High-Power GaAs Infrared Emitters
MAX
+125
+260
160
100
2.5
L.E.D.
5
L C
Ø0.195 [4.95]
Ø0.178 [4.52]
0.112 [2.84]
0.098 [2.49]
MIN
920
WINDOW CAP
1
5
UNITS
HEADER
(WELDED)
mW
TO-46 HERMETIC CAN PACKAGE
80
mA
o
o
A
V
C
C
O
HALF INTENSITY BEAM ANGLE
TYP
1.30
940
1.2
0.8
0.8
50
30
nm,Type PDI-E901
APPLICATIONS
TYPICAL RADIATION PATTERN
1.00 [25.4] MIN
Photo interrupters
I.R. remotes
Infrared sources
100
0.145 [3.68]
80
60
40
20
0.025 [0.64]
0.022 [0.56]
0
Ø0.019 [0.48]
Ø0.016 [0.41]
& CASE
CATHODE
ANODE
BEAM ANGLE,
MAX
1.50
960
SPECTRAL OUTPUT
WAVELENGTH, (nm)
0.100 [2.54]
(deg)
UNITS
C L
L C
mW
µ µ S
m m S
nm
nm
pF
V
V

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