PDI-E902 Advanced Photonix Inc, PDI-E902 Datasheet

PDI-E902

Manufacturer Part Number

PDI-E902

Description

EMITTER IR 940NM 40DEG TO-46

Manufacturer

Advanced Photonix Inc

Datasheet

1.PDI-E902.pdf (1 pages)

Specifications of PDI-E902

Current - Dc Forward (if)

100mA

Wavelength

940nm

Voltage - Forward (vf) Typ

1.3V

Viewing Angle

80°

Orientation

Top View

Mounting Type

Through Hole

Package / Case

TO-46

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

Radiant Intensity (ie) Min @ If

Other names

PT-PDI-E902

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FEATURES

*1/16 inch from case for 3 secs max

PHOTONIC

DETECTORS INC.

ABSOLUTE MAXIMUM RATING

ELECTRO-OPTICAL CHARACTERISTICS

Information in this technical data sheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications

are subject to change without notice. Optical power and radiant intensity measured using uncapped dimpled TO-46 into integrating sphere.

SYMBOL

SYMBOL CHARACTERISTIC

Hermetically sealed

High reliablity

Medium emission angle

To & Ts

100

8 0

6 0

4 0

2 0

D D

FORWARD CURRENT, I

FORWARD CURRENT

POWER OUTPUT vs

Output Power

Forward Voltage

Reverse Breakdown Voltage

Peak Wavelength

Spectral Halfwidth

Terminal Capacitance

Rise Time

Fall Time

Power Dissipation

Continuous Forward Current

Peak Forward Current (10 s, 10Hz)

Reverse voltage

Storage & Operating Temperature

Soldering Temperature*

PARAMETER

(mA)

DESCRIPTION:

diode uses high reliability liquid phase epitaxially

grown GaAs. Optimized for high power, high effi-

ciency. This 940 nm emitter is packaged in a TO-46

header with a glass lens cap.

(TA=25

PACKAGE DIMENSIONS inch (mm)

TEST CONDITIONS

1 0 0 0

1 0 0

0.145 [3.68]

1.0

0.1

The PDI-E902 infrared emitting

C unless otherwise noted)

= 20 mA

= 100 mA

= 10 µ µ A

= 100 mA

= 0 V,f = 1 MHz

Ø0.212 [5.38]

Ø0.209 [5.31]

FORWARD CURRENT vs

(TA=25

- FORWARD VOLTAGE - (V)

FORWARD VOLTAGE

MIN

-65

Peak Wavelength 940

L C

0.013 [0.33] SQ

CATHODE

BOTTOM SIDE ANODE

Ø0.005 [Ø0.13]

[1.02]

0.040

C unless otherwise noted)

45°

High-Power GaAs Infrared Emitters

Ø0.195 [4.95]

Ø0.178 [4.52]

MAX

+125

+260

160

100

2.5

L.E.D.

0.145 [3.68]

LENS CAP

(WELDED)

MIN

HEADER

920

UNITS

TO-46 HERMETIC CAN PACKAGE

HALF INTENSITY BEAM ANGLE

0.082

[2.08]

TYP

1.30

940

1.2

0.8

100

nm,Type PDI-E902

APPLICATIONS

-80

TYPICAL RADIATION PATTERN

Photo interrupters

I.R. remotes

Infrared sources

100

1.00 [25.4]

0.025 [0.64]

0.022 [0.56]

Ø0.016 [0.41]

Ø0.019 [0.48]

-60

ANODE & CASE

CATHODE

MIN

BEAM ANGLE,

MAX

-40

1.50

960

SPECTRAL OUTPUT

WAVELENGTH, (nm)

-20

0.100 [2.54]

0 20 40 60 80

(deg)

UNITS

C L

L C

µ µ S

m m S

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