PDI-E904 Advanced Photonix Inc, PDI-E904 Datasheet

PDI-E904

Manufacturer Part Number

PDI-E904

Description

EMITTER IR 940NM 80DEG TO-46

Manufacturer

Advanced Photonix Inc

Datasheet

1.PDI-E904.pdf (1 pages)

Specifications of PDI-E904

Current - Dc Forward (if)

100mA

Wavelength

940nm

Voltage - Forward (vf) Typ

1.3V

Viewing Angle

160°

Orientation

Top View

Mounting Type

Through Hole

Package / Case

TO-46

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

Radiant Intensity (ie) Min @ If

Other names

PT-PDI-E904

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FEATURES

*1/16 inch from case for 3 secs max

PHOTONIC

DETECTORS INC.

ABSOLUTE MAXIMUM RATING

ELECTRO-OPTICAL CHARACTERISTICS

Information in this technical data sheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications

are subject to change without notice. Optical power and radiant intensity measured using uncapped dimpled TO-46 into integrating sphere.

SYMBOL

SYMBOL CHARACTERISTIC

Hermetically sealed

High reliablity

Wide angle

To & Ts

100

8 0

6 0

4 0

2 0

D D

FORWARD CURRENT, I

FORWARD CURRENT

POWER OUTPUT vs

Output Power

Forward Voltage

Reverse Breakdown Voltage

Peak Wavelength

Spectral Halfwidth

Terminal Capacitance

Rise Time

Fall Time

Power Dissipation

Continuous Forward Current

Peak Forward Current (10 s, 10Hz)

Reverse voltage

Storage & Operating Temperature

Soldering Temperature*

PARAMETER

(mA)

DESCRIPTION:

diode uses high reliability liquid phase epitaxially

grown GaAs. Optimized for high power, high effi-

ciency. This 940 nm emitter is packaged in a TO-46

header with a clear epoxy glob top.

(TA=25

PACKAGE DIMENSIONS inch (mm)

TEST CONDITIONS

1 0 0 0

1 0 0

1.0

0.1

0.145 [3.68]

The PDI-E904 infrared emitting

C unless otherwise noted)

= 20 mA

= 100 mA

= 10 µ µ A

= 100 mA

= 0 V,f = 1 MHz

FORWARD CURRENT vs

(TA=25

Ø0.213 [5.41]

Ø0.209 [5.32]

- FORWARD VOLTAGE - (V)

FORWARD VOLTAGE

MIN

-65

Peak Wavelength 940

L C

0.013 [0.33] SQ

CATHODE

BOTTOM SIDE ANODE

Ø0.005 [Ø0.13]

0.040

[1.02]

C unless otherwise noted)

45°

High-Power GaAs Infrared Emitters

MAX

+125

+260

160

100

2.5

L.E.D.

CLEAR EPOXY

MIN

920

Ø0.168 [4.27]

HEADER

UNITS

TO-46 HERMETIC CAN PACKAGE

HALF INTENSITY BEAM ANGLE

TYP

1.30

940

1.2

0.8

nm,Type PDI-E904

APPLICATIONS

1.00 [25.4] MIN

0.100 [2.54] MAX

TYPICAL RADIATION PATTERN

0.043 [1.09]

0.040 [1.02]

Photo interrupters

I.R. remotes

Infrared sources

Ø0.019 [0.48]

Ø0.016 [0.41]

100

ANODE AND CASE

CATHODE

BEAM ANGLE,

MAX

1.50

960

SPECTRAL OUTPUT

WAVELENGTH, (nm)

0.100 [2.54]

C L

L C

(deg)

UNITS

µ µ S

m m S

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