PDI-E913 Advanced Photonix Inc, PDI-E913 Datasheet

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PDI-E913

Manufacturer Part Number
PDI-E913
Description
EMITTER IR 940NM 10DEG TO-46
Manufacturer
Advanced Photonix Inc
Datasheet

Specifications of PDI-E913

Current - Dc Forward (if)
180mA
Wavelength
940nm
Voltage - Forward (vf) Typ
1.35V
Viewing Angle
20°
Orientation
Top View
Mounting Type
Through Hole
Package / Case
TO-46
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Radiant Intensity (ie) Min @ If
-
Other names
PT-PDI-E913
FEATURES
*1/16 inch from case for 3 secs max
PHOTONIC
DETECTORS INC.
ABSOLUTE MAXIMUM RATING
ELECTRO-OPTICAL CHARACTERISTICS
Information in this technical data sheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications
are subject to change without notice. Optical power and radiant intensity measured using uncapped dimpled TO-46 into integrating sphere.
SYMBOL
SYMBOL CHARACTERISTIC
Dual cathode
High current
Medium-high emission angle
To & Ts
TS
Pd
V
V
D D
I
I
P
R
FP
FP
I
t
t
R
O
P
r
f
R
F
d
FORWARD CURRENT
POWER OUTPUT vs
I
F
Output Power
Forward Voltage
Reverse Current
Peak Wavelength
Spectral Halfwidth
Dynamic Resistance
Rise Time
Fall Time
IN AMPS
Power Dissipation
Continuous Forward Current
Peak Forward Current (100 s pulse,10pps)
Reverse voltage
Storage & Operating Temperature
Soldering Temperature*
PARAMETER
DESCRIPTION:
diode uses dual cathode, high current liquid
phase epitaxially grown GaAs. Optimized for high
power, and high current at 940 nm. Packaged in a
TO-46 can with a glass lens cap.
(TA=25
PACKAGE DIMENSIONS inch (mm)
TEST CONDITIONS
I
I
V
I
I
I
I
I
O
F
F
F
F
F
F
F
High-Power & Current GaAs Infrared Emitters
940 nm LED CHIP
C unless otherwise noted)
= 100 mA
= 100 mA
R
= 50 mA
= 50 mA
= 100 mA
= 100 mA
= 100 mA
= -3.0 V
TYPICAL POWER OUTPUT
(TA=25
DEGRADATION CURVE
MIN
Peak Wavelength, 940
The PDI-E913 infrared emitting
-65
.019 [0.48]
Ø.215 [5.5]
Ø.207 [5.3]
CATHODE
I
F
.045 [1.1]
.030 [0.8]
IN AMPS
O
C unless otherwise noted)
C L
45°
MAX
+125
+260
360
180
3.0
3.0
C L
Ø.188 [4.8]
Ø.180 [4.6]
.047 [1.2]
.035 [0.9]
MIN
925
1.0
UNITS
mW
TO-46 HERMETIC CAN PACKAGE
10
mA
o
o
A
V
C
C
.028 [0.7] MAX
O
LENS CAP
(WELDED)
HALF INTENSITYBEAM ANGLE
.257 [6.5]
.223 [5.7]
.214 [5.4]
.192 [4.9]
TYP
1.35
940
5.0
0.6
1.1
1.5
50
nm,Type PDI-E913
APPLICATIONS
TYPICAL RADIATION PATTERN
Photoelectric switches
Reflective switches
Smoke detectors
2X 1.000 [25.4]
INDUSTRY EQUIVALENTS
TEMT55P (A-D), 5525
ANODE & CASE
.015 [0.38] MAX
BEAM ANGLE,
MAX
1.75
955
CATHODE
HEADER
10
SPECTRAL OUTPUT
Ø.019 [0.5] TYP
TEMPERATURE,
.100 [2.54]
(deg)
UNITS
Ohm
mW
m m A
µ µ S
m m S
nm
nm
V
C L
L C
º
C

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