SFH 4252-Z OSRAM Opto Semiconductors Inc, SFH 4252-Z Datasheet - Page 3

EMITTER 850NM TOPLED

SFH 4252-Z

Manufacturer Part Number
SFH 4252-Z
Description
EMITTER 850NM TOPLED
Manufacturer
OSRAM Opto Semiconductors Inc
Datasheet

Specifications of SFH 4252-Z

Wavelength
850nm
Package / Case
2-LCC (J-Lead)
Current - Dc Forward (if)
100mA
Radiant Intensity (ie) Min @ If
32mW/sr @ 100mA
Voltage - Forward (vf) Typ
1.5V
Viewing Angle
120°
Orientation
Top View
Mounting Type
Surface Mount
Beam Angle
60 deg
Radiant Intensity
16 mW/sr
Maximum Forward Current
100 mA
Maximum Power Dissipation
180 mW
Maximum Operating Temperature
+ 100 C
Minimum Operating Temperature
- 40 C
Fall Time
12 ns
Mounting Style
SMD/SMT
Operating Voltage
1.5 V
Rise Time
12 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
475-2656-2
Q65110A2468
Kennwerte (
Characteristics (cont’d)
Bezeichnung
Parameter
Abmessungen der aktiven Chipfläche
Dimension of the active chip area
Schaltzeiten, I
auf 10%, bei
Switching times, Ι
90% to 10%,
Durchlassspannung
Forward voltage
I
I
Sperrstrom
Reverse current
Gesamtstrahlungsfluss
Total radiant flux
I
Temperaturkoeffizient von I
I
Temperature coefficient of I
Temperaturkoeffizient von
Temperature coefficient of
Temperaturkoeffizient von λ,
Temperature coefficient of λ,
2009-05-14
F
F
F
F
= 100 mA,
= 1 A,
= 100 mA,
= 100 mA
t
p
= 100 µs
T
I
t
t
I
F
p
p
F
A
e
= 100 mA,
= 20 ms
= 20 ms
von 10% auf 90% und von 90%
= 100 mA,
= 25 °C)
e
from 10% to 90% and from
R
V
R
V
e
e
L
L
F
F
bzw. Φ
or Φ
,
,
I
= 50 Ω
= 50 Ω
I
F
I
I
F
F
F
= 100 mA
= 100 mA
= 100 mA
= 100 mA
e
,
I
e
F
,
= 100 mA
Symbol
Symbol
L
L
t
V
V
I
Φ
TC
TC
TC
r
R
3
,
F
F
e typ
×
×
t
I
V
λ
f
B
W
Wert
Value
0.3 × 0.3
12
1.5 (< 1.8)
2.4 (< 3.0)
not designed for
reverse
operation
45
– 0.5
– 0.7
+ 0.3
Einheit
Unit
mm²
ns
V
V
μA
mW
%/K
mV/K
nm/K
SFH 4252

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