SI3210MPPQ1-EVB Silicon Laboratories Inc, SI3210MPPQ1-EVB Datasheet - Page 12

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SI3210MPPQ1-EVB

Manufacturer Part Number
SI3210MPPQ1-EVB
Description
BOARD EVAL W/SI3201 INTERFACE
Manufacturer
Silicon Laboratories Inc
Series
ProSLIC®r
Datasheets

Specifications of SI3210MPPQ1-EVB

Main Purpose
Interface, Analog Front End (AFE)
Utilized Ic / Part
Si3210
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Secondary Attributes
-
Embedded
-
Primary Attributes
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Si3210/Si3211
Table 5. Monitor ADC Characteristics
(V
12
Table 6. Si321x DC Characteristics, V
(V
Table 7. Si321x DC Characteristics, V
(V
Differential Nonlinearity
(6-bit resolution)
Integral Nonlinearity
(6-bit resolution)
Gain Error (Voltage)
Gain Error (Current)
High Level Input Voltage
Low Level Input Voltage
High Level Output Voltage
Low Level Output Voltage
Input Leakage Current
High Level Input Voltage
Low Level Input Voltage
High Level Output Voltage
Low Level Output Voltage
Input Leakage Current
DDA
DDA
DDA
, V
,V
,V
DDD
DDD
DDD
Parameter
Parameter
Parameter
= 4.75 to 5.25 V, T
= 3.13 to 3.47 V, T
= 3.13 to 5.25 V, T
A
A
A
Symbol
= 0 to 70 °C for K-Grade, –40 to 85 °C for B-Grade)
Symbol
= 0 to 70 °C for K-Grade, –40 to 85 °C for B-Grade)
Symbol
DNLE
= 0 to 70 °C for K-Grade, –40 to 85 °C for B-Grade)
INLE
V
V
V
V
V
V
V
V
I
I
OH
OL
OH
OL
IH
L
IL
IH
L
IL
DIO1,DIO2,SDITHRU: I
DIO1,DIO2,DOUT,SDITHRU:
DIO1,DIO2,DOUT,SDITHRU:
SDO,INT,DTX:I
DDA
DIO1,DIO2,SDITHRU:
DDA
SDO,INT,DTX:I
DOUT: I
SDO, DTX:I
Test Condition
Test Condition
I
DTX:I
O
DOUT: I
Test Condition
= –4 mA SDO,
= V
= V
I
O
I
O
= 4 mA
O
O
DDD
Rev. 1.45
DDD
= –8 mA
= 2 mA
= –40 mA
O
= –40 mA
O
O
= 5.0 V
= 3.3 V
= –4 mA
= 8 mA
O
= 4 mA
O
=–2 mA
0.7 x V
V
V
DDD
DDD
0.7 x V
V
V
–1/2
Min
Min
–10
–1
DDD
DDD
– 0.6
– 0.8
Min
–10
DDD
– 0.6
– 0.8
DDD
Typ
Typ
Typ
0.3 x V
0.3 x V
Max
Max
Max
1/2
10
20
0.4
0.4
10
10
1
DDD
DDD
Unit
LSB
LSB
Unit
Unit
%
%
µA
µA
V
V
V
V
V
V
V
V
V
V

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