MCP1650EV Microchip Technology, MCP1650EV Datasheet - Page 5
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MCP1650EV
Manufacturer Part Number
MCP1650EV
Description
BOARD EVAL FOR MCP1650,51,52,53
Manufacturer
Microchip Technology
Specifications of MCP1650EV
Main Purpose
DC/DC, Step Up
Outputs And Type
2, Non-Isolated
Voltage - Output
5V, 12V
Current - Output
1A, 400mA
Regulator Topology
Boost
Frequency - Switching
750kHz
Board Type
Fully Populated
Utilized Ic / Part
MCP1650, MCP1651, MCP1652, MCP1653
Silicon Manufacturer
Microchip
Application Sub Type
Boost Controller
Kit Application Type
Power Management - Voltage Regulator
Silicon Core Number
MCP1650
Kit Contents
Board
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Voltage - Input
-
Power - Output
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Contains lead / RoHS non-compliant
1.0
Absolute Maximum Ratings †
V
CS,FB,LBI,LBO,SHDN,PG,EXT............ GND – 0.3V to
Current at EXT pin ................................................ ±1A
Storage temperature .......................... -65°C to +150°C
Operating Junction Temperature........ -40°C to +125°C
ESD protection on all pins
DC CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, all parameters apply at V
T
Input Characteristics
Supply Voltage
Undervoltage Lockout
(S Option)
Under Voltage Lockout
(R Option)
Undervoltage Hysteresis
Shutdown Supply Current
Quiescent Supply Current
Soft Start Time
Feedback Characteristics
Feedback Voltage
Feedback Comparator
Hysteresis
Feedback Input Bias Current
Current Sense Input
Current Sense Threshold
Delay from Current Sense to
Output
Ext Drive
EXT Driver ON Resistance
(High Side)
EXT Driver ON Resistance
(Low Side)
Oscillator Characteristics
Switching Frequency
Low Duty Cycle Switch-Over
Voltage
Duty Cycle Switch Voltage
Hysteresis
Low Duty Cycle
High Duty Cycle
IN TO
J
2004 Microchip Technology Inc.
= -40°C to +125°C. Typical values apply for V
GND........................................................... 6.0V
ELECTRICAL
CHARACTERISTICS
Parameters
UVLO
T
V
DC
I
DC
DC
UVLO
UVLO
SNS-TH
dly_ISNS
R
R
LowDuty
V
F
Sym
I
I
T
V
V
SHD
FBlk
HIGH
LOW
OSC
HYS
I
HIGH
SS
Q
FB
LOW
IN
Hyst
HYST
V
IN
4 kV HBM
+ 0.3V
1.85
1.18
Min
650
IN
2.7
2.4
-50
75
50
72
—
—
—
—
—
—
—
—
—
—
= 3.3V, T
0.001
2.55
1.22
Typ
117
120
500
114
750
2.0
3.8
—
12
—
80
92
56
80
8
4
A
+25°C.
† Notice: Stresses above those listed under “Maximum Rat-
ings” may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operational listings of this specification is not implied. Expo-
sure to maximum rating conditions for extended periods may
affect device reliability.
Max
2.15
1.26
220
155
850
5.5
2.7
23
50
18
12
62
88
—
—
—
—
—
1
MCP1650/51/52/53
Units
kHz
mV
mV
mV
mV
µA
µA
nA
µs
ns
%
%
V
V
V
V
V
IN
= +2.7V to +5.5V, SHDN = High,
V
V
SHDN = GND
EXT = Open
All conditions
V
V
IN
IN
FB
IN
rising edge
rising edge
rising edge
< 1.3V
Conditions
DS21876A-page 5