NCP3066SCBSTGEVB ON Semiconductor, NCP3066SCBSTGEVB Datasheet - Page 19

• Manufacturer Part Number: NCP3066SCBSTGEVB
• Description: EVAL BOARD FOR NCP3066SCBSTG
• Manufacturer: ON Semiconductor

Specifications of NCP3066SCBSTGEVB

• Design Resources: NCP3066 Boost SOIC EVB BOM NCP3066SCBSTGEVB Gerber Files NCP3066 Boost SOIC EVB Schematic
• Current - Output / Channel: 350mA
• Outputs And Type: 1, Non-Isolated
• Voltage - Output: 16V
• Features: Brightness Control
• Voltage - Input: 12V
• Utilized Ic / Part: NCP3066
• Silicon Manufacturer: On Semiconductor
• Silicon Core Number: NCP3066
• Kit Application Type: Power Management - Voltage Regulator
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• For Use With/related Products: NCP3066SCBSTG
• Other names: NCP3066SCBSTGEVBOS

−Z−
−Y−
B
H
−X−
8
1
0.25 (0.010)
G
A
D
4
5
M
Z
S
Y
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
S
C
0.25 (0.010)
X
SEATING
PLANE
S
0.024
0.10 (0.004)
0.6
0.275
M
7.0
PACKAGE DIMENSIONS
SOLDERING FOOTPRINT*
Y
http://onsemi.com
M
N
CASE 751−07
X 45
SOIC−8 NB
ISSUE AJ
_
M
19
K
SCALE 6:1
0.060
0.155
1.52
4.0
1.270
0.050
J
inches
mm
NOTES:
1. DIMENSIONING AND TOLERANCING PER
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A AND B DO NOT INCLUDE
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
5. DIMENSION D DOES NOT INCLUDE DAMBAR
6. 751−01 THRU 751−06 ARE OBSOLETE. NEW
ANSI Y14.5M, 1982.
MOLD PROTRUSION.
PER SIDE.
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
STANDARD IS 751−07.
DIM
M
A
B
C
D
G
H
K
N
S
J
MILLIMETERS
MIN
4.80
3.80
1.35
0.33
0.10
0.19
0.40
0.25
5.80
0
1.27 BSC
_
MAX
5.00
4.00
1.75
0.51
0.25
0.25
1.27
0.50
6.20
8
_
0.189
0.150
0.053
0.013
0.004
0.007
0.016
0.010
0.228
MIN
0
0.050 BSC
INCHES
_
0.197
0.157
0.069
0.020
0.010
0.010
0.050
0.020
0.244
MAX
8
_