LMV852EVAL National Semiconductor, LMV852EVAL Datasheet - Page 5

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LMV852EVAL

Manufacturer Part Number
LMV852EVAL
Description
BOARD EVALUATION LMV852 8MHZ
Manufacturer
National Semiconductor
Series
PowerWise®r
Datasheets

Specifications of LMV852EVAL

Channels Per Ic
2 - Dual
Amplifier Type
General Purpose
Output Type
Single-Ended, Rail-to-Rail
Slew Rate
4.5 V/µs
Current - Output / Channel
65mA
Operating Temperature
-40°C ~ 125°C
Current - Supply (main Ic)
820µA
Voltage - Supply, Single/dual (±)
2.7 V ~ 5.5 V, ±1.35 V ~ 2.75 V
Board Type
Fully Populated
Utilized Ic / Part
LMV852
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
-3db Bandwidth
-
Measurement Results
To show the sensitivity of the IN+ pin two types of measure-
ment results are presented using the LMV851 evaluation
board:
EMIRR VS. FREQUENCY
Figure 10 depicts the EMIRR versus frequency for the various
temperatures. The measurement is performed with a fixed RF
level of −20 dBV
frequency range is 10 MHz to 4 GHz.
EMIRR VS. POWER
Figure 11 depicts the EMIRR as a function of power at four
typical frequencies.
The EMIRR as a function of the frequency of the applied
signal. The level of the signal is set to the standard level
of 100 mV
The EMIRR as a function of the level of the applied signal.
The frequency is set to four typical values: 400 MHz,
900 MHz, 1.8 GHz, and 2.4 GHz.
FIGURE 10. EMIRR vs. Frequency
P
(−20 dBV
P
and a varying RF signal frequency. The
P
).
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In this figure two areas can be distinguished. At the left side
of the figure, the EMIRR increases as a function of input level;
whereas at the right side the EMIRR decreases as a function
of the input level.
The left side of the figure is actually an artifact resulting from
the limited accuracy of the measurement setup. For the rela-
tively low input levels, the resulting offset voltage shift is well
below the noise level. Thus, when calculating the EMIRR for
that region, the ratio of the input level to the noise level is
depicted. As the noise level is constant for the setup, an in-
creasing EMIRR is obtained for increasing input signal level.
For the right side, the obtained offset-shift is well above the
noise level. As the relation between offset voltage shift and
RF input level is quadratic, the ratio as used in the EMIRR is
inversely proportional to the RF input level, which is in line
with the displayed slope of “−1”.
FIGURE 11. EMIRR vs. Power
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