DEMO9S08LG32 Freescale Semiconductor, DEMO9S08LG32 Datasheet - Page 34

DEMO BOARD FOR LG32 FAMILY MCU

DEMO9S08LG32

Manufacturer Part Number
DEMO9S08LG32
Description
DEMO BOARD FOR LG32 FAMILY MCU
Manufacturer
Freescale Semiconductor
Type
MCUr

Specifications of DEMO9S08LG32

Contents
Board, CD
Processor To Be Evaluated
MC9S08LG32x
Data Bus Width
8 bit
Interface Type
USB
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 40 C
Silicon Manufacturer
Freescale
Core Architecture
HCS08
Core Sub-architecture
HCS08
Silicon Core Number
MC9S08
Silicon Family Name
S08LG
Rohs Compliant
Yes
For Use With/related Products
MC9S08LG32
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Electrical Characteristics
2.12
2.13
This section provides details about program/erase times and program-erase endurance for the flash memory.
Program and erase operations do not require any special power sources other than the normal V
information about program/erase operations, see the Memory section.
34
1
2
3
4
5
C
D
D
D
D
D
These values are hardware state machine controlled. User code does not need to count cycles. This information supplied
for calculating approximate time to program and erase.
The program and erase currents are additional to the standard run I
with V
Typical endurance for flash was evaluated for this product family on the 9S12Dx64. For additional information on how
Freescale defines typical endurance, please refer to Engineering Bulletin EB619, Typical Endurance for Nonvolatile
Memory.
Typical data retention values are based on intrinsic capability of the technology measured at high temperature and
de-rated to 25 °C using the Arrhenius equation. For additional information on how Freescale defines typical data retention,
please refer to Engineering Bulletin EB618, Typical Data Retention for Nonvolatile Memory.
The frequency of this clock is controlled by a software setting.
C
D
D
D
D
C
C
C
C
D
D
C
C
VLL3 Supply Voltage
LCD Frame Frequency
LCD Charge Pump Capacitance
LCD Bypass Capacitance
LCD Glass Capacitance
DD
LCD Specifications
Flash Specifications
Supply voltage for program/erase
–40 °C to 85 °C
Supply voltage for read operation
Internal FCLK frequency
Internal FCLK period (1/FCLK)
Byte program time (random location)
Byte program time (burst mode)
Page erase time
Mass erase time
Byte program current
Page erase current
Program/erase endurance
Data retention
= 5.0 V, bus frequency = 4.0 MHz.
T
T = 25 °C
L
to T
H
= –40 °C to + 85 °C
Characteristic
5
Characteristic
2
2
3
3
1
4
Table 17. LCD Electricals, 3 V Glass
MC9S08LG32 Series Data Sheet, Rev. 7
2
Table 18. Flash Characteristics
2
V
Symbol
prog/erase
R
R
V
f
t
t
t
t
t
t
FCLK
IDDBP
IDDPE
D_ret
Burst
Page
Mass
Fcyc
Read
prog
Symbol
C
f
C
VLL3
C
Frame
BYLCD
glass
LCD
DD
10,000
. These values are measured at room temperatures
Min
150
2.7
2.7
15
5
Min
2.7
28
100,000
Typical
20,000
4000
100
9
4
4
6
2000
Typ
100
100
30
DD
supply. For more detailed
Freescale Semiconductor
Max
6.67
200
5.5
5.5
8000
Max
100
100
5.5
64
cycles
years
t
t
t
t
Unit
kHz
mA
mA
Fcyc
Fcyc
Fcyc
Fcyc
μs
V
V
Units
Hz
pF
V

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