MPC8544COMEDEV Freescale Semiconductor, MPC8544COMEDEV Datasheet - Page 17
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MPC8544COMEDEV
Manufacturer Part Number
MPC8544COMEDEV
Description
KIT DEV EXPRESS MPC8544COM
Manufacturer
Freescale Semiconductor
Type
MPUr
Datasheets
1.MPC8544VTALF.pdf
(117 pages)
2.MPC8544VTALF.pdf
(2 pages)
3.MPC8544VTALF.pdf
(1340 pages)
Specifications of MPC8544COMEDEV
Contents
Board
For Use With/related Products
MPC8544
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
- Current page: 17 of 117
- Download datasheet (2Mb)
6.1
Table 10
MPC8544E when GV
Table 11
Table 12
GV
Freescale Semiconductor
I/O supply voltage
I/O reference voltage
I/O termination voltage
Input high voltage
Input low voltage
Output leakage current
Output high current (V
Output low current (V
Notes:
1. GV
2. MV
3. V
4. Output leakage is measured with all outputs disabled, 0 V
Input/output capacitance: DQ, DQS, DQS
Delta input/output capacitance: DQ, DQS, DQS
Note:
1. This parameter is sampled. GV
I/O supply voltage
I/O reference voltage
I/O termination voltage
Input high voltage
Input low voltage
noise on MV
equal to MV
DD
TT
DD
REF
is not applied directly to the device. It is the supply to which far end signal termination is made and is expected to be
(typ) = 2.5 V
is expected to be within 50 mV of the DRAM GV
is expected to be equal to 0.5 × GV
provides the DDR2 I/O capacitance when GV
provides the recommended operating conditions for the DDR SDRAM component(s) of the
provides the recommended operating conditions for the DDR SDRAM component(s) when
DDR SDRAM DC Electrical Characteristics
Parameter/Condition
Parameter/Condition
REF
REF
Table 10. DDR2 SDRAM DC Electrical Characteristics for GV
. This rail should track variations in the DC level of MV
Parameter/Condition
Table 12. DDR SDRAM DC Electrical Characteristics for GV
MPC8544E PowerQUICC III Integrated Processor Hardware Specifications, Rev. 5
may not exceed ±2% of the DC value.
OUT
OUT
.
= 0.33 V)
DD
= 1.26 V)
Table 11. DDR2 SDRAM Capacitance for GV
(typ) = 1.8 V
DD
= 1.8 V ± 0.090 V, f = 1 MHz, T
.
DD
, and to track GV
Symbol
Symbol
MV
MV
GV
GV
V
V
V
I
V
V
I
I
V
OH
OZ
OL
TT
TT
IH
IH
REF
IL
DD
REF
IL
DD
DD
at all times.
≤
V
Symbol
OUT
DD
C
DD
C
DIO
MV
MV
MV
MV
A
IO
0.49 × GV
DC variations as measured at the receiver. Peak-to-peak
0.49 × GV
≤
(typ) = 1.8 V.
= 25°C, V
GV
REF
REF
REF
REF
–13.4
2.375
1.71
–0.3
13.4
–0.3
REF
Min
–50
Min
DD
– 0.04
+ 0.26
– 0.04
+ 0.31
.
.
DD
DD
OUT
DD
Min
—
6
(typ) = 1.8 V
= GV
MV
MV
MV
0.51 × GV
0.51 × GV
MV
GV
GV
DD
DD
DD
REF
REF
REF
/2, V
2.625
REF
DD
DD
(typ) = 2.5 V
Max
1.89
Max
(typ) = 1.8 V
50
—
—
+ 0.04
Max
+ 0.3
– 0.24
+ 0.04
+ 0.3
0.5
– 0.3
OUT
8
DD
DD
(peak-to-peak) = 0.2 V.
DDR and DDR2 SDRAM
Unit
Unit
Unit
mA
mA
μA
pF
pF
V
V
V
V
V
V
V
V
V
V
Notes
Notes
Notes
—
—
—
—
—
—
1
2
3
4
1
1
1
2
3
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