IRF640S Vishay, IRF640S Datasheet
IRF640S
Specifications of IRF640S
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IRF640S Summary of contents
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... 1.6 mm from case. e. Uses IRF640/SiHF640 data and test conditions containing terminations are not RoHS compliant, exemptions may apply Document Number: 91037 S-81241-Rev. A, 07-Jul-08 IRF640S, IRF640L, SiHF640S, SiHF640L Power MOSFET FEATURES • Surface Mount 200 • Low-Profile Through-Hole 0.18 • Available in Tape and Reel 70 • ...
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... IRF640S, IRF640L, SiHF640S, SiHF640L Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient a (PCB Mounted, Steady-State) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...
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... TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig Typical Output Characteristics, T Fig Typical Output Characteristics, T Document Number: 91037 S-81241-Rev. A, 07-Jul-08 IRF640S, IRF640L, SiHF640S, SiHF640L = 25 °C Fig Typical Transfer Characteristics J = 175 °C Fig Normalized On-Resistance vs. Temperature J Vishay Siliconix www.vishay.com 3 ...
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... IRF640S, IRF640L, SiHF640S, SiHF640L Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area Document Number: 91037 S-81241-Rev. A, 07-Jul-08 ...
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... Fig Maximum Drain Current vs. Case Temperature Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case D.U. 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91037 S-81241-Rev. A, 07-Jul-08 IRF640S, IRF640L, SiHF640S, SiHF640L 15 V Driver + - Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig ...
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... IRF640S, IRF640L, SiHF640S, SiHF640L Vishay Siliconix Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 Current regulator Same type as D.U.T. 50 kΩ 0.2 µF 0.3 µ D.U. Current sampling resistors Fig. 13b - Gate Charge Test Circuit Document Number: 91037 S-81241-Rev ...
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... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?91037. Document Number: 91037 S-81241-Rev. A, 07-Jul-08 IRF640S, IRF640L, SiHF640S, SiHF640L Peak Diode Recovery dV/dt Test Circuit + Circuit layout considerations • ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...