IRG4RC20F International Rectifier, IRG4RC20F Datasheet

DIODE IGBT 600V D-PAK

IRG4RC20F

Manufacturer Part Number
IRG4RC20F
Description
DIODE IGBT 600V D-PAK
Manufacturer
International Rectifier
Datasheet

Specifications of IRG4RC20F

Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.1V @ 15V, 12A
Current - Collector (ic) (max)
22A
Power - Max
66W
Input Type
Standard
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Igbt Type
-
Other names
*IRG4RC20F

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Part Number:
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Manufacturer:
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INSULATED GATE BIPOLAR TRANSISTOR
Benefits
Absolute Maximum Ratings
Thermal Resistance
Features
* When mounted on 1" square PCB (FR-4 or G-10 Material).
• Generation 4 IGBTs offer highest efficiency
• Optimized for specific application conditions
• High power density and current rating
• Fast: Optimized for medium operating
• Generation 4 IGBT design provides tighter
• Industry standard TO-252AA package
• Combines very low V
V
I
I
I
I
V
E
P
P
T
T
R
R
Wt
For recommended footprint and soldering techniques refer to application note #AN-994
C
C
CM
LM
kHz in resonant mode).
previous generation IGBTs.
parameter distribution and higher efficiency than
GE
STG
CES
ARV
D
D
J
losses
frequencies (1-5 kHz in hard switching, >20
JC
JA
@ T
@ T
@ T
@ T
C
C
C
C
= 25°C
= 100°C
= 25°C
= 100°C
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Junction-to-Case
Junction-to-Ambient (PCB mount)*
Weight
CE(on)
with low switching
Parameter
Parameter
G
N-channel
300 (0.063 in. (1.6mm) from case )
0.3 (0.01)
Typ.
–––
–––
C
E
10 lbf•in (1.1N•m)
-55 to + 150
IRG4RC20F
TO-252AA
Max.
± 20
D-Pak
600
5.0
22
12
44
66
26
44
V
@V
Fast Speed IGBT
CE(on) typ.
Max.
V
GE
–––
1.9
50
CES
PD - 91731A
= 15V, I
= 600V
= 1.82V
C
= 12A
Units
°C/W
Units
g (oz)
mJ
°C
W
V
A
V
2/22/01

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IRG4RC20F Summary of contents

Page 1

... Mounting torque, 6- screw. Thermal Resistance Parameter R Junction-to-Case JC R Junction-to-Ambient (PCB mount Weight * When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994 PD - 91731A IRG4RC20F Fast Speed IGBT C V CES V CE(on) typ 15V N-channel D-Pak TO-252AA Max ...

Page 2

... IRG4RC20F Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES V Emitter-to-Collector Breakdown Voltage (BR)ECS Temperature Coeff. of Breakdown Voltage (BR)CES J V Collector-to-Emitter Saturation Voltage CE(ON) V Gate Threshold Voltage GE(th Temperature Coeff. of Threshold Voltage GE(th Forward Transconductance fe I Zero Gate Voltage Collector Current CES I Gate-to-Emitter Leakage Current ...

Page 3

... T = 125° 90°C sink Gate drive as specified Power Dissipation = 15W requency (kHz) (Load Current = I of fundamental) RMS 100 150 Fig Typical Transfer Characteristics IRG4RC20F Triangular wave: Clamp voltage: 80% of rated A 10 100 ° ° 50V CC 5µs PULSE WIDTH Gate-to-Emitter Voltage (V) ...

Page 4

... IRG4RC20F 100 T , Case Temperature ( C) C Fig Maximum Collector Current vs. Case Temperature 0.50 1 0.20 0.10 0.05 0.1 0.02 SINGLE PULSE 0.01 (THERMAL RESPONSE) 0.01 0.00001 0.0001 Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 3 15V PULSE WIDTH 2.0 1.0 125 150 -60 -40 -20 ° ...

Page 5

... Gate Resistance (Ohm) G Fig Typical Switching Losses vs. Gate Resistance www.irf.com SHORTED 100 0 Fig Typical Gate Charge vs 0 -60 -40 -20 Fig Typical Switching Losses vs. IRG4RC20F = 400V = 12A Total Gate Charge (nC) G Gate-to-Emitter Voltage 50 = 50Ohm = 15V = 480V 100 120 140 160 ° Junction Temperature ( Junction Temperature ...

Page 6

... IRG4RC20F 5 50Ohm 150 C ° 480V 15V 4.0 GE 3.0 2.0 1.0 0 Collector Current (A) C Fig Typical Switching Losses vs. Collector-to-Emitter Current 50V Driver .T 80 Note the 50V pow er s upply, pulse w idth a nd inductor w ill inc rea se to obta in ra ted Id. Fig. 13a - ...

Page 7

... B - 0.8 9 (.035 ) 0.6 4 (.025 ) 0 .25 (. & . 982 . LLING INC H . 4 JED TLIN AX. +0 .16 (.00 6). IRG4RC20F Fig. 14b - Switching Loss Waveforms 1.14 (.0 45) 0.89 (.0 35) 0.5 8 (.02 3) 0.4 6 (.01 8) 6.45 (. 5.68 (. LEAD ASSIGNMENTS NTS 1 - GATE ATE 2 - COLLECTOR ...

Page 8

... IRG4RC20F D-Pak (TO-252AA) Tape & Reel Information ILLIM ILL & - LIN -481 . IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 8 1 6.3 ( .641 ) 1 5.7 ( .619 ) Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. ...

Page 9

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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