IRLZ14S Vishay, IRLZ14S Datasheet

MOSFET N-CH 60V 10A D2PAK

IRLZ14S

Manufacturer Part Number
IRLZ14S
Description
MOSFET N-CH 60V 10A D2PAK
Manufacturer
Vishay
Datasheet

Specifications of IRLZ14S

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
200 mOhm @ 6A, 5V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
10A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
8.4nC @ 5V
Input Capacitance (ciss) @ Vds
400pF @ 25V
Power - Max
3.7W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRLZ14S

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRLZ14S
Manufacturer:
IR
Quantity:
12 500
Part Number:
IRLZ14SL
Manufacturer:
IR
Quantity:
12 500
Note
a. See device orientation.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
e. Uses IRLZ14, SiHLZ14 data and test conditions.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 90414
S-82999-Rev. A, 12-Jan-09
I
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Single Pulse Avalanche Energy
Maximum Power Dissipation
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
2
PAK
DS
DS(on)
g
gs
gd
SD
DD
(Max.) (nC)
(nC)
(nC)
(V)
≤ 10 A, dI/dt ≤ 90 A/µs, V
= 25 V, starting T
(TO-262)
(Ω)
G
D
S
G
a, e
e
D
J
D
2
= 25 °C, L = 790 µH, R
PAK (TO-263)
S
c, e
DD
b, e
V
≤ V
GS
D
IRLZ14SPbF
SiHLZ14S-E3
IRLZ14S
SiHLZ14S
DS
2
= 5 V
PAK (TO-263)
, T
J
G
≤ 175 °C.
Single
8.4
3.5
6.0
60
N-Channel MOSFET
G
= 25 Ω, I
C
Power MOSFET
= 25 °C, unless otherwise noted
D
S
0.20
V
IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14L
GS
AS
at 5 V
= 10 A (see fig. 12).
T
T
for 10 s
C
A
= 25 °C
= 25 °C
T
T
C
C
D
IRLZ14STRRPbF
SiHLZ14STR-E3
IRLZ14TRR
SiHLZ14STR
= 100 °C
= 25 °C
2
FEATURES
• Advanced Process Technology
• Surface Mount (IRLZ14S, SiHLZ14S)
• Low-Profile Through-Hole (IRLZ14L, SiHLZ14L)
• 175 °C Operating Temperature
• Fast Switching
• Lead (Pb)-free Available
DESCRIPTION
Third generation Power MOSFETs from Vishay utilize
advanced processing techniques to achieve extermely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
Power MOSFETs are well known for, provides the designer
with an extremely efficient reliable device for use in a wide
variety of applications.
The D
accommodating die sizes up to HEX-4. It provides the
highest power capability and lowest possible on-resistance
in any existing surface mount package. The D
suitable for high current applications because of its low
internal connection resistance and can dissipate up to 2.0 W
in a typical surface mount application.
The through-hole version (IRLZ44L, SiHLZ44L) is available
for low-profile applications.
PAK (TO-263)
2
PAK is a surface mount power package capable of
a
a
SYMBOL
T
dV/dt
J
a
V
V
E
I
P
, T
a
I
DM
DS
GS
AS
D
D
stg
- 55 to + 175
I
-
-
IRLZ14L
SiHLZ14L
2
PAK (TO-262)
LIMIT
300
± 10
0.29
7.2
3.7
4.5
60
10
40
68
43
Vishay Siliconix
d
www.vishay.com
UNIT
W/°C
V/ns
RoHS*
COMPLIANT
2
mJ
°C
W
PAK is
V
A
Available
1

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IRLZ14S Summary of contents

Page 1

... Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 90414 S-82999-Rev. A, 12-Jan-09 IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14L Power MOSFET FEATURES • Advanced Process Technology 60 • Surface Mount (IRLZ14S, SiHLZ14S) 0.20 • Low-Profile Through-Hole (IRLZ14L, SiHLZ14L) 8.4 • 175 °C Operating Temperature 3.5 • Fast Switching 6.0 • ...

Page 2

... IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14L Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient a (PCB Mount) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...

Page 3

... TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig Typical Output Characteristics Fig Typical Output Characteristics Document Number: 90414 S-82999-Rev. A, 12-Jan-09 IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14L Fig Typical Transfer Characteristics Fig Normalized On-Resistance vs. Temperature Vishay Siliconix www.vishay.com 3 ...

Page 4

... IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14L Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area Document Number: 90414 S-82999-Rev. A, 12-Jan-09 ...

Page 5

... Fig Maximum Drain Current vs. Case Temperature Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 90414 S-82999-Rev. A, 12-Jan-09 IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14L Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit d(on) Fig. 10b - Switching Time Waveforms ...

Page 6

... IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14L Vishay Siliconix Vary t to obtain p required I AS D.U. 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com Fig. 12b - Unclamped Inductive Waveforms Current regulator Same type as D ...

Page 7

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?90414. Document Number: 90414 S-82999-Rev. A, 12-Jan-09 IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14L Peak Diode Recovery dV/dt Test Circuit + Circuit layout considerations • ...

Page 8

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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