LTC1157 Linear Technology, LTC1157 Datasheet

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LTC1157

Manufacturer Part Number
LTC1157
Description
3.3V Dual Micropower High-Side/Low-Side MOSFET Driver
Manufacturer
Linear Technology
Datasheet

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FEATURE
A
TYPICAL
PPLICATI
Notebook Computer Power Management
Palmtop Computer Power Management
P-Channel Switch Replacement
Battery Charging and Management
Mixed 5V and 3.3V Supply Switching
Stepper Motor and DC Motor Control
Cellular Telephones and Beepers
Allows Lowest Drop 3.3V Supply Switching
Operates on 3.3V or 5V Nominal Supplies
3 Microamps Standby Current
80 Microamps ON Current
Drives Low Cost N-Channel Power MOSFETs
No External Charge Pump Components
Controlled Switching ON and OFF Times
Compatible with 3.3V and 5V Logic Families
Available in 8-Pin SOIC
3.3V
LOGIC
3.3V
Ultra Low Voltage Drop 3.3V Dual High-Side Switch
S
A
O
PPLICATI
+
U
10 F
IN1
IN2
S
LTC1157
GND
V
S
O
G1
G2
U
(8.7V)
(8.7V)
IRLR024
LTC1157 • TA01
IRLR024
High-Side/Low-Side MOSFET Driver
LOAD
LOAD
3.3V
3.3V
D
The LTC1157 dual 3.3V micropower MOSFET gate driver
makes it possible to switch either supply or ground
reference loads through a low R
(N-channel switches are required at 3.3V because P-
channel MOSFETs do not have guaranteed R
V
the gate drive voltage 5.4V above the positive rail (8.7V
above ground), fully enhancing a logic level N-channel
switch for 3.3V high-side applications and a standard N-
channel switch for 3.3V low-side applications. The gate
drive voltage at 5V is typically 8.8V above supply (13.8V
above ground), so standard N-channel MOSFET switches
can be used for both high-side and low-side applications.
Micropower operation, with 3 A standby current and
80 A operating current, makes the LTC1157 well suited
for battery-powered applications.
The LTC1157 is available in both 8-pin DIP and SOIC.
GS
ESCRIPTIO
3.3V). The LTC1157 internal charge pump boosts
3.3V Dual Micropower
12
10
6
8
4
2
0
2.0
U
Gate Voltage Above Supply
2.5
3.0
SUPPLY VOLTAGE (V)
3.5
DS(ON)
4.0
4.5
N-channel switch
5.0
LTC1157
LTC1157 • TA02
5.5
DS(ON)
6.0
with
1

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