RSB6.8STE61 Rohm Semiconductor, RSB6.8STE61 Datasheet - Page 2

• Manufacturer Part Number: RSB6.8STE61
• Description: DIODE ZENR ESD PROT 10W SOD523
• Manufacturer: Rohm Semiconductor

Specifications of RSB6.8STE61

• Voltage - Reverse Standoff (typ): 3.5V
• Voltage - Breakdown: 5.78V
• Power (watts): 10W
• Polarization: Bidirectional
• Mounting Type: Surface Mount
• Package / Case: SC-79, SOD-523
• 2 Elements: EMD2
• No. Of Pins: 2
• Power Dissipation Pd: 150mW
• Svhc: No SVHC (18-Jun-2010)
• Breakdown Voltage: 6.8V
• Capacitance Cd @ Vr Typ: 30pF
• Diode Type: ESD Protection
• Operating Temperature: RoHS Compliant
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Dimensions: 0.8 mm W x 1.2 mm L x 0.6 mm H
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: RSB6.8STE61; RSB6.8STE61TR

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RSB6.8S
0.0001
0.001
1000
0.01
6.9
6.8
6.7
6.6
6.5
100
0.1
7
10
1
0.001
0
1
0.01
Ta=150℃
Ta=125℃
Ta=75℃
Rth-t CHARACTERISTICS
2
Vz-Iz CHARACTERISTICS
ZENER VOLTAGE:Vz(mV)
Vz DISRESION MAP
0.1
3
AVE:6.696V
TIME:t(ms)
4
Mounted on epoxy board
IM=10mA
1
5
1ms
300us
6
10
time
Ta=25℃
n=30pcs
Iz=1mA
7
Ta=-25℃
IF=100mA
Ta=25℃
100
Rth(j-a)
Rth(j-c)
8
1000
9
0.00001
0.0001
10000
0.001
1000
0.01
100
0.1
10
10
1
9
8
7
6
5
4
3
2
1
0
0
0.5
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
1
IR DISRESION MAP
AVE:1.0482nA
2/2
Ta=150℃
1.5
2
Ta=125℃
Ta=125℃
Ta=-25℃
Ta=75℃
Ta=25℃
2.5
Ta=25℃
VR=10V
n=30pcs
3
3.5
100
50
45
40
35
30
25
20
15
10
10
5
0
1
0
0.5
VR-Ct CHARACTERISTICS
REVERSE VOLTAGE:VR(V)
Ct DISRESION MAP
1
AVE:29.89pF
1.5
2
2.5
2011.03 - Rev.C
Ta=25℃
n=10pcs
f=1MHz
VR=0V
f=1MHz
Data Sheet
3
3.5