RSA12MGTR Rohm Semiconductor, RSA12MGTR Datasheet
RSA12MGTR
Manufacturer Part Number
RSA12MGTR
Description
TVS DIODE 200W 12V UNI SOD-123
Manufacturer
Rohm Semiconductor
Datasheet
1.RSA12MGTR.pdf
(3 pages)
Specifications of RSA12MGTR
Voltage - Reverse Standoff (typ)
12V
Voltage - Breakdown
13.3V
Power (watts)
200W
Polarization
Unidirectional
Mounting Type
Surface Mount
Package / Case
SOD-123
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Diodes
ESD Protection Device (TVS)
RSA12M
ESD Protection
1) Small power mold type. (PMDU)
2) High reliability
Silicon epitaxial planar
Peak pulse power(tp=10×1000us)
Stand off power
Junction temperature
Storage temperature
Breakdown voltage
Clamping voltage
Reverse current
Features
Construction
Electrical characteristic (Ta=25 C)
Applications
Absolute maximum ratings (Ta=25 C)
Parameter
Parameter
Symbol
VBR
VC
IR
Dimensions (Unit : mm)
Taping dimensions (Unit : mm)
Symbol
V
Tstg
Ppk
RMN
Tj
13.3
Min.
-
-
Typ.
-
-
-
-55 to +150
Limits
200
150
Max.
14.7
19.9
12
2.5
Unit
uA
V
V
Structure
Land size figure (Unit : mm)
Unit
I
I
V
W
V
R
pp
RMN
=1.0mA
=10.1A
=12.0V
Conditions
RSA12M
1/2
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RSA12MGTR Summary of contents
Page 1
Diodes ESD Protection Device (TVS) RSA12M Applications ESD Protection Features 1) Small power mold type. (PMDU) 2) High reliability Construction Silicon epitaxial planar Absolute maximum ratings (Ta=25 C) Parameter Peak pulse power(tp=10×1000us) Stand off power Junction temperature Storage temperature Electrical ...
Page 2
Diodes Electrical characteristic curves RSA12M 2/2 ...
Page 3
Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...