NUP2105LT1G ON Semiconductor, NUP2105LT1G Datasheet - Page 8

• Manufacturer Part Number: NUP2105LT1G
• Description: IC CAN BUS PROTECTOR DUAL SOT23
• Manufacturer: ON Semiconductor

Specifications of NUP2105LT1G

• Voltage - Reverse Standoff (typ): 24V
• Voltage - Breakdown: 26.2V
• Power (watts): 350W
• Polarization: 2 Channel Array - Bidirectional
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Polarity: Bidirectional
• Channels: 2 Channels
• Clamping Voltage: 44 V
• Operating Voltage: 24 V (Min)
• Breakdown Voltage: 26.2 V
• Termination Style: SMD/SMT
• Peak Surge Current: 8 A
• Peak Pulse Power Dissipation: 350 W
• Capacitance: 30 pF
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Dimensions: 1.3 mm W x 2.9 mm L
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NUP2105LT1GOSTR

Final Product/Process Change Notification #16266
SC88 and SC88A
MSQA6V1W5T2G
Test:
Precondition
Autoclave+PC Ta=121C RH=100% ~15 psig
TC+PC Ta= -65 C to 150 C
HTSL
DPA Per AECQ101, after 1000 cyc TC
RSH
ELECTRICAL CHARACTERIZATION PLAN:
Datasheet specifications and product electrical performance will remain unchanged
Characterization of each qual vehicle device will be performed to the following requirements:
ELECTRICAL CHARACTERIZATION RESULTS:
Available upon request
CHANGED PART IDENTIFICATION:
Products assembled with the Copper Wire from the ON Semiconductor facility will have a Finish
Good Date Code representing Work Week 35, 2009 (date code 9) or newer.
Issue Date: 08 Jun 2009
1) Three temperature characterization on 30 units from 3 lots
2) ESD performance ( HBM, MM) on 15 units from 1 lot
MSL1@ 260C , 3 X IR at 260 C/260 C
Ta=150C
Ta=260C, 10 sec dwell
Conditions:
Rev.14 Jun 2007
Interval:
1000 cyc
1008 hrs
96 hrs
Results
0/480
0/240
0/240
0/240
0/6
0/90
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