SM8S26A-E3/2D Vishay, SM8S26A-E3/2D Datasheet - Page 4

TVS 8W 26V 5% DO-218AB

SM8S26A-E3/2D

Manufacturer Part Number
SM8S26A-E3/2D
Description
TVS 8W 26V 5% DO-218AB
Manufacturer
Vishay
Series
SM8Sr
Datasheet

Specifications of SM8S26A-E3/2D

Voltage - Reverse Standoff (typ)
26V
Voltage - Breakdown
28.9V
Power (watts)
8W
Polarization
Unidirectional
Mounting Type
Surface Mount
Package / Case
DO-218AB
Polarity
Unidirectional
Channels
1 Channel
Clamping Voltage
42.1 V
Operating Voltage
26 V
Breakdown Voltage
28.9 V to 31.9 V
Termination Style
SMD/SMT
Peak Surge Current
157 A
Peak Pulse Power Dissipation
6600 W
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Dimensions
8.7 mm W x 13.7 mm L x 5 mm H
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SM8S26A-E3/2D
Manufacturer:
VISHAY/威世
Quantity:
20 000
SM8S10 thru SM8S43A
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
www.vishay.com
4
0.01
100
0.1
10
1
0.01
Fig. 5 - Typical Transient Thermal Impedance
0.413 (10.5)
0.374 (9.5)
0.197 (5.0)
0.185 (4.7)
0.1
0.342 (8.7)
0.327 (8.3)
t - Pulse Width (s)
0.016 (0.4) MIN.
DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
For technical questions within your region, please contact one of the following:
1
Lead 2/Metal Heatsink
0.406 (10.3)
0.382 (9.7)
0.366 (9.3)
0.343 (8.7)
DO-218AB
0.539 (13.7)
0.524 (13.3)
0.628 (16.0)
0.592 (15.0)
10
R
R
θJA
θJC
100
Lead 1
New Product
0.116 (3.0)
0.093 (2.4)
0.028 (0.7)
0.020 (0.5)
0.098 (2.5)
0.059 (1.5)
0.138 (3.5)
0.098 (2.5)
100 000
0.413 (10.5)
10 000
0.374 (9.5)
1000
10
DiodesEurope@vishay.com
Measured at Stand-Off
Fig. 6 - Typical Junction Capacitance
Mounting Pad Layout
15
V
WM
0.366 (9.3)
0.343 (8.7)
Voltage V
- Reverse Stand-Off Voltage (V)
0.606 (15.4)
0.583 (14.8)
20
WM
25
0.150 (3.8)
0.126 (3.2)
Measured at Zero Bias
30
V
Document Number: 88387
sig
f = 1.0 MHz
35
T
0.091 (2.3)
0.067 (1.7)
J
= 50 mV
= 25 °C
0.116 (3.0)
0.093 (2.4)
Revision: 09-Feb-11
40
p-p
45

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