ATTINY13V-10SSU Atmel, ATTINY13V-10SSU Datasheet - Page 166

• Manufacturer Part Number: ATTINY13V-10SSU
• Description: IC MCU AVR 1K FLASH 10MHZ 8SOIC
• Manufacturer: Atmel
• Series: AVR® ATtinyr

Specifications of ATTINY13V-10SSU

• Core Processor: AVR
• Core Size: 8-Bit
• Speed: 10MHz
• Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
• Number Of I /o: 6
• Program Memory Size: 1KB (512 x 16)
• Program Memory Type: FLASH
• Eeprom Size: 64 x 8
• Ram Size: 64 x 8
• Voltage - Supply (vcc/vdd): 1.8 V ~ 5.5 V
• Data Converters: A/D 4x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 8-SOIC (3.9mm Width)
• Cpu Family: ATtiny
• Device Core: AVR
• Device Core Size: 8b
• Frequency (max): 10MHz
• Interface Type: SPI
• Total Internal Ram Size: 64Byte
• # I/os (max): 6
• Number Of Timers - General Purpose: 1
• Operating Supply Voltage (typ): 2.5/3.3/5V
• Operating Supply Voltage (max): 5.5V
• Operating Supply Voltage (min): 1.8V
• On-chip Adc: 4-chx10-bit
• Instruction Set Architecture: RISC
• Operating Temp Range: -40C to 85C
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOIC
• Package: 8SOIC
• Family Name: ATtiny
• Maximum Speed: 10 MHz
• Operating Supply Voltage: 2.5|3.3|5 V
• Data Bus Width: 8 Bit
• Number Of Programmable I/os: 6
• Number Of Timers: 1
• For Use With: ATSTK600 - DEV KIT FOR AVR/AVR32770-1007 - ISP 4PORT ATMEL AVR MCU SPI/JTAGATAVRDRAGON - KIT DRAGON 32KB FLASH MEM AVRATAVRISP2 - PROGRAMMER AVR IN SYSTEMATJTAGICE2 - AVR ON-CHIP D-BUG SYSTEM
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Connectivity: -
• Lead Free Status / Rohs Status: Compliant

24. Errata
24.1
24.2
24.3
24.3.1
24.3.2
24.3.3
166
ATtiny13 Rev. D
ATtiny13 Rev. C
ATtiny13 Rev. B
ATtiny13
Wrong values read after Erase Only operation
High Voltage Serial Programming Flash, EEPROM, Fuse and Lock Bits may fail
Device may lock for further programming
The revision letter in this section refers to the revision of the ATtiny13 device.
•
1. EEPROM can not be written below 1.9 Volt
Revision C has not been sampled.
•
•
•
•
•
•
EEPROM can not be written below 1.9 Volt
Wrong values read after Erase Only operation
High Voltage Serial Programming Flash, EEPROM, Fuse and Lock Bits may fail
Device may lock for further programming
debugWIRE communication not blocked by lock-bits
Watchdog Timer Interrupt disabled
EEPROM can not be written below 1.9 Volt
Writing the EEPROM at V
Problem Fix/Workaround
Do not write the EEPROM when V
At supply voltages below 2.7 V, an EEPROM location that is erased by the Erase Only oper-
ation may read as programmed (0x00).
Problem Fix/Workaround
If it is necessary to read an EEPROM location after Erase Only, use an Atomic Write opera-
tion with 0xFF as data in order to erase a location. In any case, the Write Only operation can
be used as intended. Thus no special considerations are needed as long as the erased loca-
tion is not read before it is programmed.
Writing to any of these locations and bits may in some occasions fail.
Problem Fix/Workaround
After a writing has been initiated, always observe the RDY/BSY signal. If the writing should
fail, rewrite until the RDY/BSY verifies a correct writing. This will be fixed in revision D.
Special combinations of fuse bits will lock the device for further programming effectively
turning it into an OTP device. The following combinations of settings/fuse bits will cause this
effect:
– 128 kHz internal oscillator (CKSEL[1..0] = 11), shortest start-up time
– 9.6 MHz internal oscillator (CKSEL[1..0] = 10), shortest start-up time
(SUT[1..0] = 00), Debugwire enabled (DWEN = 0) or Reset disabled RSTDISBL = 0.
(SUT[1..0] = 00), Debugwire enabled (DWEN = 0) or Reset disabled RSTDISBL = 0.
CC
below 1.9 volts might fail.
CC
is below 1.9 volts.
2535J–AVR–08/10