PIC18F4420-I/ML Microchip Technology, PIC18F4420-I/ML Datasheet - Page 14

IC MCU FLASH 8KX16 44QFN

PIC18F4420-I/ML

Manufacturer Part Number
PIC18F4420-I/ML
Description
IC MCU FLASH 8KX16 44QFN
Manufacturer
Microchip Technology
Series
PIC® 18Fr

Specifications of PIC18F4420-I/ML

Core Size
8-Bit
Program Memory Size
16KB (8K x 16)
Core Processor
PIC
Speed
40MHz
Connectivity
I²C, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, HLVD, POR, PWM, WDT
Number Of I /o
36
Program Memory Type
FLASH
Eeprom Size
256 x 8
Ram Size
768 x 8
Voltage - Supply (vcc/vdd)
4.2 V ~ 5.5 V
Data Converters
A/D 13x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
44-QFN
Controller Family/series
PIC18
No. Of I/o's
36
Eeprom Memory Size
256Byte
Ram Memory Size
768Byte
Cpu Speed
40MHz
No. Of Timers
4
Processor Series
PIC18F
Core
PIC
Data Bus Width
8 bit
Data Ram Size
768 B
Interface Type
MSSP, SPI, I2C, PSP, USART
Maximum Clock Frequency
40 MHz
Number Of Programmable I/os
36
Number Of Timers
1 x 8
Operating Supply Voltage
2 V to 5.5 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
3rd Party Development Tools
52715-96, 52716-328, 52717-734, 52712-325, EWPIC18
Development Tools By Supplier
PG164130, DV164035, DV244005, DV164005, PG164120, ICE2000, ICE4000, DV164136
Minimum Operating Temperature
- 40 C
On-chip Adc
13 bit
Package
44QFN EP
Device Core
PIC
Family Name
PIC18
Maximum Speed
40 MHz
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
For Use With
XLT44QFN2 - SOCKET TRAN ICE 44QFN/40DIPAC164322 - MODULE SOCKET MPLAB PM3 28/44QFN444-1001 - DEMO BOARD FOR PICMICRO MCU
Lead Free Status / Rohs Status
 Details
PIC18F2XXX/4XXX FAMILY
3.0
Programming includes the ability to erase or write the
various memory regions within the device.
In all cases, except high-voltage ICSP Bulk Erase, the
EECON1 register must be configured in order to
operate on a particular memory region.
When using the EECON1 register to act on code
memory, the EEPGD bit must be set (EECON1<7> = 1)
and the CFGS bit must be cleared (EECON1<6> = 0).
The WREN bit must be set (EECON1<2> = 1) to
enable writes of any sort (e.g., erases) and this must be
done prior to initiating a write sequence. The FREE bit
must be set (EECON1<4> = 1) in order to erase the
program space being pointed to by the Table Pointer.
The erase or write sequence is initiated by setting the
WR bit (EECON1<1> = 1). It is strongly recommended
that the WREN bit only be set immediately prior to a
program erase.
3.1
3.1.1
Erasing code or data EEPROM is accomplished by
configuring two Bulk Erase Control registers located at
3C0004h and 3C0005h. Code memory may be erased,
portions at a time, or the user may erase the entire
device in one action. Bulk Erase operations will also
clear any code-protect settings associated with the
memory block being erased. Erase options are detailed
in
(CPD = 0), the user must request an erase of data
EEPROM (e.g., 0084h as shown in
TABLE 3-1:
DS39622L-page 14
Chip Erase
Erase Data EEPROM
Erase Boot Block
Erase Configuration Bits
Erase Code EEPROM Block 0
Erase Code EEPROM Block 1
Erase Code EEPROM Block 2
Erase Code EEPROM Block 3
Erase Code EEPROM Block 4
Erase Code EEPROM Block 5
Note 1:
Table
DEVICE PROGRAMMING
ICSP Erase
3-1. If data EEPROM is code-protected
Description
Selected devices only, see
“Data EEPROM
HIGH-VOLTAGE ICSP BULK ERASE
BULK ERASE OPTIONS
(1)
Programming”.
(3C0005h:3C0004h)
Table
Section 3.3
3F8Fh
0084h
0081h
0082h
0180h
0280h
0480h
0880h
1080h
2080h
Data
3-1).
The actual Bulk Erase function is a self-timed
operation. Once the erase has started (falling edge of
the 4th PGC after the NOP command), serial execution
will cease until the erase completes (Parameter P11).
During this time, PGC may continue to toggle but PGD
must be held low.
The code sequence to erase the entire device is shown
in
TABLE 3-2:
FIGURE 3-1:
Command
Table 3-2
Note:
0000
0000
0000
0000
0000
0000
1100
0000
0000
0000
0000
0000
0000
1100
0000
0000
4-Bit
A Bulk Erase is the only way to reprogram
code-protect bits from an ON state to an
OFF state.
and the flowchart is shown in
Payload
0E 3C
6E F8
0E 00
6E F7
0E 05
6E F6
3F 3F
0E 3C
6E F8
0E 00
6E F7
0E 04
6E F6
8F 8F
00 00
00 00
Data
BULK ERASE COMMAND
SEQUENCE
3C0004h to Erase
Delay P11 + P10
Write 8F8Fh to
Entire Device
Write 3F3Fh
to 3C0005h
BULK ERASE FLOW
 2010 Microchip Technology Inc.
MOVLW 3Ch
MOVWF TBLPTRU
MOVLW 00h
MOVWF TBLPTRH
MOVLW 05h
MOVWF TBLPTRL
Write 3F3Fh to 3C0005h
MOVLW 3Ch
MOVWF TBLPTRU
MOVLW 00h
MOVWF TBLPTRH
MOVLW 04h
MOVWF TBLPTRL
Write 8F8Fh TO 3C0004h
to erase entire
device.
NOP
Hold PGD low until
erase completes.
Done
Time
Start
Core Instruction
Figure
3-1.

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