ATTINY84V-10MUR Atmel, ATTINY84V-10MUR Datasheet - Page 170
ATTINY84V-10MUR
Manufacturer Part Number
ATTINY84V-10MUR
Description
MCU AVR 8KB FLASH 10MHZ 20QFN
Manufacturer
Atmel
Series
AVR® ATtinyr
Datasheet
1.ATTINY24-20MU.pdf
(238 pages)
Specifications of ATTINY84V-10MUR
Core Processor
AVR
Core Size
8-Bit
Speed
10MHz
Connectivity
USI
Peripherals
Brown-out Detect/Reset, POR, PWM, Temp Sensor, WDT
Number Of I /o
12
Program Memory Size
8KB (4K x 16)
Program Memory Type
FLASH
Eeprom Size
512 x 8
Ram Size
512 x 8
Voltage - Supply (vcc/vdd)
1.8 V ~ 5.5 V
Data Converters
A/D 8x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
*
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
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19.7.5
170
ATtiny24/44/84
Programming the EEPROM
Figure 19-4. Addressing the Flash which is Organized in Pages
Figure 19-5. High-voltage Serial Programming Waveforms
The EEPROM is organized in pages, see
EEPROM, the data is latched into a page buffer. This allows one page of data to be pro-
grammed simultaneously. The programming algorithm for the EEPROM Data memory is as
follows (refer to
SDO
PB0
PB1
PB2
PB3
1. Load Command “Write EEPROM”.
2. Load EEPROM Page Buffer.
3. Program EEPROM Page. Wait after Instr. 2 until SDO goes high for the “Page Program-
4. Repeat 2 through 3 until the entire EEPROM is programmed or until all data has been
5. End Page Programming by Loading Command “No Operation”.
SDI
SCI
SII
ming” cycle to finish.
programmed.
PROGRAM MEMORY
PROGRAM
COUNTER
PAGE
0
MSB
Table 19-16 on page
PAGE ADDRESS
WITHIN THE FLASH
MSB
MSB
1
PCMSB
2
PCPAGE
3
171):
4
PAGEMSB
PCWORD
Table 20-12 on page
5
WORD ADDRESS
WITHIN A PAGE
6
INSTRUCTION WORD
7
PAGE
LSB
LSB
LSB
8
183. When programming the
9
PCWORD[PAGEMSB:0]:
00
01
02
PAGEEND
10
8006K–AVR–10/10
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