MCP6232-E/P Microchip Technology, MCP6232-E/P Datasheet - Page 4

• Manufacturer Part Number: MCP6232-E/P
• Description: IC OPAMP 1.8V DUAL R-R 8DIP
• Manufacturer: Microchip Technology

Specifications of MCP6232-E/P

• Slew Rate: 0.15 V/µs
• Package / Case: 8-DIP (0.300", 7.62mm)
• Amplifier Type: General Purpose
• Number Of Circuits: 2
• Output Type: Rail-to-Rail
• Gain Bandwidth Product: 300kHz
• Current - Input Bias: 1pA
• Voltage - Input Offset: 5000µV
• Current - Supply: 20µA
• Current - Output / Channel: 23mA
• Voltage - Supply, Single/dual (±): 1.8 V ~ 6 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Through Hole
• Number Of Channels: 2
• Common Mode Rejection Ratio (min): 61 dB
• Input Offset Voltage: 5 mV
• Input Bias Current (max): 1 pA
• Operating Supply Voltage: 3 V, 5 V
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: Through Hole
• Shutdown: No
• Supply Voltage (max): 6 V
• Supply Voltage (min): 1.8 V
• Technology: CMOS
• Voltage Gain Db: 110 dB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• -3db Bandwidth: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

MCP6231/1R/1U/2/4
AC ELECTRICAL CHARACTERISTICS
TEMPERATURE CHARACTERISTICS
1.1
The test circuits used for the DC and AC tests are
shown in
capacitors are laid out according to the rules discussed
in Section 4.6 “PCB Surface Leakage”.
FIGURE 1-1:
Most Non-Inverting Gain Conditions.
DS21881E-page 4
Electrical Characteristics: Unless otherwise indicated, T
V
AC Response
Gain Bandwidth Product
Phase Margin
Slew Rate
Noise
Input Noise Voltage
Input Noise Voltage Density
Input Noise Current Density
Electrical Characteristics: Unless otherwise indicated, V
Temperature Ranges
Extended Temperature Range
Operating Temperature Range
Storage Temperature Range
Thermal Package Resistances
Thermal Resistance, 5L-SC70
Thermal Resistance, 5L-SOT-23
Thermal Resistance, 8L-DFN
Thermal Resistance, 8L-MSOP
Thermal Resistance, 8L-TDFN
Thermal Resistance, 8L-PDIP
Thermal Resistance, 8L-SOIC
Thermal Resistance, 14L-PDIP
Thermal Resistance, 14L-SOIC
Thermal Resistance, 14L-TSSOP
V
OUT
Note:
V
DD
IN
/2
≈ V
Test Circuits
R
R
DD
N
G
Figure 1-1
The internal Junction Temperature (T
/2, R
Parameters
Parameters
MCP623X
L
= 100 kΩ to V
V
AC and DC Test Circuit for
DD
and
0.1 µF
R
Figure
F
DD
/2 and C
1 µF
1-1. The bypass
C
L
L
V
GBWP
Sym
= 60 pF.
θ
θ
θ
θ
θ
θ
θ
θ
θ
θ
L
Sym
T
T
T
PM
SR
E
JA
JA
JA
JA
JA
JA
JA
JA
JA
JA
e
V
R
i
A
A
A
ni
ni
ni
OUT
J
L
) must not exceed the Absolute Maximum specification of +150°C.
Min
Min
-40
-40
-65
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
A
DD
= +25°C, V
= +1.8V to +5.5V and V
FIGURE 1-2:
Most Inverting Gain Conditions.
V
0.15
Typ
300
6.0
0.6
84.5
V
65
52
DD
Typ
331
256
206
163
120
100
41
85
70
—
—
—
IN
/2
DD
R
R
N
G
= +1.8 to 5.5V, V
Max
—
—
—
—
—
—
+125
+125
+150
Max
—
—
—
—
—
—
—
—
—
—
MCP623X
nV/√Hz
fA/√Hz
V
µV
Units
SS
V/µs
AC and DC Test Circuit for
kHz
DD
Units
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
© 2009 Microchip Technology Inc.
°
P-P
°C
°C
°C
= GND.
0.1 µF
SS
R
F
G = +1 V/V
f = 0.1 Hz to 10 Hz
f = 1 kHz
f = 1 kHz
= GND, V
Note
1 µF
Conditions
Conditions
C
CM
L
= V
V
L
V
R
DD
OUT
L
/2,