MCP607-I/P Microchip Technology, MCP607-I/P Datasheet - Page 4

• Manufacturer Part Number: MCP607-I/P
• Description: IC OPAMP 2.5V DUAL R-R 8DIP
• Manufacturer: Microchip Technology

Specifications of MCP607-I/P

• Slew Rate: 0.08 V/µs
• Package / Case: 8-DIP (0.300", 7.62mm)
• Amplifier Type: General Purpose
• Number Of Circuits: 2
• Output Type: Rail-to-Rail
• Gain Bandwidth Product: 155kHz
• Current - Input Bias: 1pA
• Voltage - Input Offset: 250µV
• Current - Supply: 18.7µA
• Current - Output / Channel: 17mA
• Voltage - Supply, Single/dual (±): 2.5 V ~ 6 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Through Hole
• Number Of Channels: 2
• Common Mode Rejection Ratio (min): 75 dB
• Input Offset Voltage: 0.25 mV
• Input Bias Current (max): 1 pA
• Operating Supply Voltage: 3 V, 5 V
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: Through Hole
• Shutdown: No
• Supply Voltage (max): 6 V
• Supply Voltage (min): 2.5 V
• Technology: CMOS
• Voltage Gain Db: 121 dB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• -3db Bandwidth: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

MCP606/7/8/9
AC CHARACTERISTICS
MCP608 CHIP SELECT CHARACTERISTICS
FIGURE 1-1:
Pin on the MCP608.
DS11177F-page 4
Electrical Characteristics: Unless otherwise indicated, V
V
AC Response
Gain Bandwidth Product
Phase Margin
Slew Rate
Noise
Input Noise Voltage
Input Noise Voltage Density
Input Noise Current Density
Electrical Characteristics: Unless otherwise indicated, V
V
CS Low Specifications
CS Logic Threshold, Low
CS Input Current, Low
CS High Specifications
CS Logic Threshold, High
CS Input Current, High
CS Input High, GND Current
Amplifier Output Leakage, CS High
CS Dynamic Specifications
CS Low to Amplifier Output Turn-on Time
CS High to Amplifier Output Hi-Z
CS Hysteresis
V
OUT
OUT
OUT
CS
I
I
CS
SS
≈ V
≈ V
DD
DD
(typical)
(typical)
/2, V
/2, V
-50 nA
-50 nA
Hi-Z
Parameters
t
L
L
ON
Parameters
= V
= V
V
DD
DD
IL
/2, R
/2, R
Timing Diagram for the CS
L
L
-18.7 µA
(typical)
= 100 kΩ to V
= 100 kΩ to V
V
IH
L
L
t
and C
and C
OFF
(typical)
(typical)
-50 nA
-50 nA
GBWP
I
Sym
O(LEAK)
V
PM
SR
E
e
Sym
I
i
I
t
Hi-Z
V
t
HYST
ni
V
CSH
I
OFF
CSL
ni
ni
ON
SS
L
L
IH
IL
= 60 pF, and CS is tied low (refer to
= 60 pF, and CS is tied low (refer to
DD
DD
0.8 V
Min
V
-0.1
—
—
—
—
—
= +2.5V to +5.5V, V
= +2.5V to +5.5V, V
-2
Min
SS
—
—
—
—
—
—
DD
-0.05
0.01
0.01
Typ
0.1
0.6
—
—
10
9
0.08
Typ
155
2.8
62
38
3
0.2 V
Max
V
100
0.1
—
—
—
—
—
DD
SS
SS
DD
Max
—
—
—
—
—
—
= GND, T
= GND, T
Units
µA
µA
µA
nA
µs
µs
Figure 1-2
Figure 1-2
V
V
V
nV/√Hz
fA/√Hz
A
A
µV
Units
V/µs
kHz
= +25°C, V
= +25°C, V
CS = 0.2V
CS = V
CS = V
CS = V
CS = 0.2V
G = +1 V/V, R
CS = 0.8V
G = +1 V/V, R
V
°
P-P
DD
© 2009 Microchip Technology Inc.
= 5.0V
and
and
G = +1 V/V
f = 0.1 Hz to 10 Hz
f = 1 kHz
f = 1 kHz
DD
DD
DD
Figure
Figure
DD
DD
DD
CM
CM
Conditions
to V
to V
L
L
= V
= V
Conditions
= 1 kΩ to V
= 1 kΩ to V
1-3).
1-3).
DD
DD
OUT
OUT
/2,
/2,
= 0.9 V
= 0.1 V
SS
SS
DD
DD
/2,
/2,