OP284EPZ Analog Devices Inc, OP284EPZ Datasheet - Page 4

• Manufacturer Part Number: OP284EPZ
• Description: IC OPAMP GP R-R 4.25MHZ LN 8DIP
• Manufacturer: Analog Devices Inc

Specifications of OP284EPZ

• Slew Rate: 4 V/µs
• Amplifier Type: General Purpose
• Number Of Circuits: 2
• Output Type: Rail-to-Rail
• Gain Bandwidth Product: 4.25MHz
• Current - Input Bias: 80nA
• Voltage - Input Offset: 100µV
• Current - Supply: 2.25mA
• Current - Output / Channel: 10mA
• Voltage - Supply, Single/dual (±): 3 V ~ 36 V, ±1.5 V ~ 18 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Through Hole
• Package / Case: 8-DIP (0.300", 7.62mm)
• Op Amp Type: Precision
• No. Of Amplifiers: 2
• Bandwidth: 4.25MHz
• Supply Voltage Range: ± 1.5V To ± 18V
• Amplifier Case Style: DIP
• No. Of Pins: 8
• Common Mode Rejection Ratio: 90
• Current, Input Bias: 80 nA
• Current, Input Offset: 50 nA
• Current, Output: ±10 mA
• Current, Supply: 2.25 mA
• Impedance, Thermal: 43 °C/W
• Number Of Amplifiers: Dual
• Package Type: PDIP-8
• Temperature, Operating, Range: -40 to +125 °C
• Voltage, Gain: 1000 V/mV
• Voltage, Input: -15 to +15 V
• Voltage, Noise: 3.9 nV/sqrt Hz
• Voltage, Offset: 150 μV
• Voltage, Output, High: 14.8 V
• Voltage, Output, Low: -14.875 V
• Voltage, Supply: ±15 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• -3db Bandwidth: -
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

OP184/OP284/OP484
V
Table 3.
Parameter
INPUT CHARACTERISTICS
OUTPUT CHARACTERISTICS
POWER SUPPLY
DYNAMIC PERFORMANCE
NOISE PERFORMANCE
1
Input offset voltage measurements are performed by automated test equipment approximately 0.5 seconds after application of power.
S
Offset Voltage, OP184/OP284E Grade
Offset Voltage, OP184/OP284F Grade
Offset Voltage, OP484E Grade
Offset Voltage, OP484F Grade
Input Bias Current
Input Offset Current
Input Voltage Range
Common-Mode Rejection Ratio
Output Voltage High
Output Voltage Low
Power Supply Rejection Ratio
Supply Current/Amplifier
Gain Bandwidth Product
Voltage Noise Density
= 3.0 V, V
CM
= 1.5 V, T
A
= 25°C, unless otherwise noted.
1
1
1
1
Symbol
V
V
V
V
I
I
CMRR
V
V
PSRR
I
GBP
e
B
OS
SY
n
OS
OS
OS
OS
OH
OL
Rev. I | Page 4 of 24
Conditions
−40°C ≤ T
−40°C ≤ T
–40°C ≤ T
–40°C ≤ T
−40°C ≤ T
−40°C ≤ T
V
V
I
I
V
V
f = 1 kHz
L
L
CM
CM
S
O
= 1.0 mA
= 1.0 mA
= ±1.25 V to ±1.75 V
= 1.5 V, −40°C ≤ T
= 0 V to 3 V
= 0 V to 3 V, −40°C ≤ T
A
A
A
A
A
A
≤ +125°C
≤ +125°C
≤ +125°C
≤ +125°C
≤ +125°C
≤ +125°C
A
≤ +125°C
A
≤ +125°C
Min
0
60
56
2.80
76
Typ
60
3
3.9
Max
65
165
125
350
100
200
150
450
450
600
50
3
125
1.35
Unit
μV
μV
μV
μV
μV
μV
μV
μV
nA
nA
nA
V
dB
dB
V
mV
dB
mA
MHz
nV/√Hz