MCP6143T-I/SN Microchip Technology, MCP6143T-I/SN Datasheet - Page 12

• Manufacturer Part Number: MCP6143T-I/SN
• Description: IC OPAMP 1.4V SNGL W/CS RR 8SOIC
• Manufacturer: Microchip Technology

Specifications of MCP6143T-I/SN

• Amplifier Type: General Purpose
• Number Of Circuits: 1
• Output Type: Rail-to-Rail
• Slew Rate: 0.003 V/µs
• Gain Bandwidth Product: 100kHz
• Current - Input Bias: 1pA
• Voltage - Input Offset: 3000µV
• Current - Supply: 0.6µA
• Current - Output / Channel: 20mA
• Voltage - Supply, Single/dual (±): 1.4 V ~ 6 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• -3db Bandwidth: -

MCP6141/2/3/4
Note: Unless otherwise indicated, T
V
FIGURE 2-31:
Pulse Response.
FIGURE 2-32:
Amplifier Output Response Time (MCP6143
only).
FIGURE 2-33:
Voltage (Below V
DS21668D-page 12
L
= V
1.E-02
1.E-03
1.E-04
1.E-05
1.E-06
1.E-07
1.E-08
1.E-09
1.E-10
1.E-11
1.E-12
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
25.0
22.5
20.0
17.5
15.0
12.5
10.0
100n
100p
100µ
10m
7.5
5.0
2.5
0.0
DD
10µ
10n
10p
1m
1µ
1n
1p
0
/2, R
-1.0 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 0.0
0
On
0
1
L
CS
= 1 MΩ to V
2
0
SS
3
1
Time (1 ms/div)
V
G = +11 V/V
R
).
DD
Large Signal Non-inverting
Chip Select (CS) to
Input Current vs. Input
L
Time (200 µs/div)
V
G = +11 V/V
V
4
Input Voltage (V)
= 50 kΩ
DD
IN
= 5.0V
High-Z
1
+125°C
= +3.0V
= 5.0V
+85°C
+25°C
-40°C
5
L
, C
1
6
L
= 60 pF, and CS is tied low.
1
7
8
1
A
V
OUT
= +25°C, V
On
9
2
10
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
2
2
DD
= +1.4V to +5.5V, V
FIGURE 2-34:
Response.
FIGURE 2-35:
Hysteresis (MCP6143 only).
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
0
V
G = +11 V/V
V
V
DD
IN
OUT
= 3.0V
0
SS
= 5.0V
On
High-to-Low
= GND, V
0
CS
1
Large Signal Inverting Pulse
Internal Chip Select (CS)
Time (200 µs/div)
© 2009 Microchip Technology Inc.
CS Voltage (V)
1
CM
1
= V
Hysteresis
Low-to-High
DD
1
/2, V
CS
1
V
OUT
OUT
2
G = -10 V/V
R
V
High-Z
L
DD
= 50 kΩ
≈ V
= 5.0V
2
DD
2
/2,