AD8057ARTZ-R2 Analog Devices Inc, AD8057ARTZ-R2 Datasheet - Page 5

IC OPAMP VF LN LP LDIST SOT23-5

AD8057ARTZ-R2

Manufacturer Part Number
AD8057ARTZ-R2
Description
IC OPAMP VF LN LP LDIST SOT23-5
Manufacturer
Analog Devices Inc
Datasheet

Specifications of AD8057ARTZ-R2

Slew Rate
1150 V/µs
Amplifier Type
Voltage Feedback
Number Of Circuits
1
-3db Bandwidth
325MHz
Current - Input Bias
500nA
Voltage - Input Offset
1000µV
Current - Supply
6mA
Voltage - Supply, Single/dual (±)
3 V ~ 12 V, ±1.5 V ~ 6 V
Operating Temperature
-40°C ~ 85°C
Mounting Type
Surface Mount
Package / Case
SOT-23-5, SC-74A, SOT-25
Op Amp Type
Voltage Feedback
No. Of Amplifiers
1
Bandwidth
325MHz
Supply Voltage Range
3V To 12V
Amplifier Case Style
SOT-23
No. Of Pins
5
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Output Type
-
Current - Output / Channel
-
Gain Bandwidth Product
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AD8057ARTZ-R2
Manufacturer:
ADI/亚德诺
Quantity:
20 000
ABSOLUTE MAXIMUM RATINGS
Table 3.
Parameter
Supply Voltage (+V
Internal Power Dissipation
Input Voltage (Common Mode)
Differential Input Voltage
Output Short-Circuit Duration
Storage Temperature Range (R)
Operating Temperature Range (A Grade)
Lead Temperature (Soldering 10sec)
1
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
Specification is for device in free air:
8-lead SOIC package: θ
5-lead SOT-23-5 package: θ
8-Lead MSOP package: θ
SOIC Package (R)
SOT-23-5 Package (RT)
MSOP Package (RM)
S
JA
to –V
JA
= 160°C/W
= 200°C/W
JA
S
= 240°C/W
)
1
Rating
12.6 V
0.8 W
0.5 W
0.6 W
±V
±4.0 V
Observe power
derating curves
−65°C to +125°C
−40°C to +85°C
300°C
S
Rev. C | Page 5 of 16
MAXIMUM POWER DISSIPATION
The maximum power that can be safely dissipated by the
AD8057/AD8058 is limited by the associated rise in junction
temperature. Exceeding a junction temperature of 175°C for
an extended period can result in device failure. Although the
AD8057/AD8058 is internally short-circuit protected, this may
not be sufficient to guarantee that the maximum junction temper-
ature (150°C) is not exceeded under all conditions. To ensure
proper operation, it is necessary to observe the maximum power
derating curves.
ESD CAUTION
Figure 5. Maximum Power Dissipation vs. Ambient Temperature
2.0
1.5
1.0
0.5
–50 –40 –30 –20 –10
0
8-LEAD MSOP
AMBIENT TEMPERATURE (°C)
8-LEAD SOIC
SOT-23-5
0
10 20 30 40 50 60 70 80 90
AD8057/AD8058
T
J
= 150°C

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