MC33071DR2G ON Semiconductor, MC33071DR2G Datasheet - Page 11

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MC33071DR2G

Manufacturer Part Number
MC33071DR2G
Description
IC OPAMP SINGLE 4.5MHZ HS 8-SOIC
Manufacturer
ON Semiconductor
Datasheet

Specifications of MC33071DR2G

Amplifier Type
General Purpose
Number Of Circuits
1
Slew Rate
13 V/µs
Gain Bandwidth Product
4.5MHz
Current - Input Bias
100nA
Voltage - Input Offset
1000µV
Current - Supply
1.9mA
Current - Output / Channel
30mA
Voltage - Supply, Single/dual (±)
3 V ~ 44 V, ±1.5 V ~ 22 V
Operating Temperature
-40°C ~ 85°C
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Output Type
-
-3db Bandwidth
-
Other names
MC33071DR2G
MC33071DR2GOSTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MC33071DR2G
Manufacturer:
ON/安森美
Quantity:
20 000
values of feedback resistances (lower current DACs). This
input pole can be compensated for by creating a feedback
zero with a capacitance across the feedback resistance, if
necessary, to reduce overshoot. For 2.0 kW of feedback
resistance, the MC34071 series can settle to within 1/2 LSB
of 8−bits in 1.0 ms, and within 1/2 LSB of 12−bits in 2.2 ms
for a 10 V step. In a inverting unity gain fast settling
configuration, the symmetrical slew rate is ±13 V/ms. In the
classic noninverting unity gain configuration, the output
positive slew rate is +10 V/ms, and the corresponding
negative slew rate will exceed the positive slew rate as a
function of the fall time of the input waveform.
are superior to that of JFETs, a low untrimmed maximum
offset voltage of 3.0 mV prime and 5.0 mV downgrade can
be economically offered with high frequency performance
characteristics. This combination is ideal for low cost
precision, high speed quad op amp applications.
equivalent circuit schematic, offers unique advantages over
the more conventional NPN/PNP transistor Class AB output
stage. A 10 kW load resistance can swing within 1.0 V of the
positive rail (V
(V
This large output swing becomes most noticeable at lower
supply voltages.
the current source transistor Q
transistor Q
circuit resistance, R
saturation voltage of the pull−down transistor Q
voltage drop I
resistance R
valued sink currents, the above voltage drops are negligible,
allowing the negative swing voltage to approach within
millivolts of V
diode D3 clamps the voltage across R
negative swing to the saturation voltage of Q
forward diode drop of D3 (≈V
supply voltage, unprecedented peak−to−peak output voltage
swing is possible as indicated by the output swing
specifications.
ground for single supply applications, the maximum
possible output swing can be achieved for a given supply
voltage. For light load currents, the load resistance will pull
the output to V
will pull the load resistance near ground during the negative
swing. The load resistance value should be much less than
that of the feedback resistance to maximize pull up
capability.
Since the bipolar input device matching characteristics
The all NPN output stage, shown in its basic form on the
The positive swing is limited by the saturation voltage of
If the load resistance is referenced to V
EE
), providing a 28.7 V
17
7
, where I
, and the voltage drop associated with the short
EE
L
CC
CC
R
. For large valued sink currents (>5.0 mA),
6
), and within 0.3 V of the negative rail
during the positive swing and the output
, and the voltage drop associated with
7
. The negative swing is limited by the
L
is the sink load current. For small
pp
7
swing from ±15 V supplies.
EE
, and V
+1.0 V). Thus for a given
BE
6
, thus limiting the
of the NPN pull up
CC
16
instead of
, plus the
16
http://onsemi.com
, the
11
been eliminated, the MC34071 series offers a 20 mA
minimum current sink capability, typically to an output
voltage of (V
output can directly source or sink base current from a
common emitter NPN transistor for fast high current
switching applications.
inherently fast, contributing to the bipolar amplifier’s high
gain bandwidth product and fast settling capability. The
associated high frequency low output impedance (30 W typ
@ 1.0 MHz) allows capacitive drive capability from 0 pF to
10,000 pF without oscillation in the unity closed loop gain
configuration. The 60° phase margin and 12 dB gain margin
as well as the general gain and phase characteristics are
virtually independent of the source/sink output swing
conditions. This allows easier system phase compensation,
since output swing will not be a phase consideration. The
high frequency characteristics of the MC34071 series also
allow excellent high frequency active filter capability,
especially for low voltage single supply applications.
5.0 V, these amplifiers are functional to 3.0 V @ 25°C
although slight changes in parametrics such as bandwidth,
slew rate, and DC gain may occur.
polarity or if the IC is installed backwards in a socket, large
unlimited current surges will occur through the device that
may result in device destruction.
bipolar amplifiers since there are no MOS transistors on the
die.
dress, component placement, and PC board layout should be
exercised for optimum frequency performance. For
example, long unshielded input or output leads may result in
unwanted input−output coupling. In order to preserve the
relatively low input capacitance associated with these
amplifiers, resistors connected to the inputs should be
immediately adjacent to the input pin to minimize additional
stray input capacitance. This not only minimizes the input
pole for optimum frequency response, but also minimizes
extraneous “pick up” at this node. Supply decoupling with
adequate capacitance immediately adjacent to the supply pin
is also important, particularly over temperature, since many
types of decoupling capacitors exhibit great impedance
changes over temperature.
protected from a direct short to ground. However, under
such conditions, it is important not to allow the device to
exceed the maximum junction temperature rating. Typically
for ±15 V supplies, any one output can be shorted
continuously to ground without exceeding the maximum
temperature rating.
Because the PNP output emitter−follower transistor has
In addition, the all NPN transistor output stage is
Although the single supply specifications is defined at
If power to this integrated circuit is applied in reverse
Special static precautions are not necessary for these
As with most high frequency amplifiers, proper lead
The output of any one amplifier is current limited and thus
EE
+1.8 V). In single supply applications the

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