S-80810CNNB-B9OT2G Seiko Instruments, S-80810CNNB-B9OT2G Datasheet - Page 29

• Manufacturer Part Number: S-80810CNNB-B9OT2G
• Description: IC VOLT DETECTOR 1.0V SC-82AB
• Manufacturer: Seiko Instruments
• Type: Simple Reset/Power-On Resetr

Specifications of S-80810CNNB-B9OT2G

• Number Of Voltages Monitored: 1
• Output: Open Drain or Open Collector
• Reset: Active Low
• Voltage - Threshold: 1V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: SC-70-4, SC-82-4, SOT-323-4, SOT-343
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reset Timeout: -

*1. −V
*2. Specified detection voltage value (−V
*3. The temperature change of the detection voltage [mV/°C] is calculated by using the following equation.
Detection voltage
Hysteresis width
Current consumption
Operating voltage
Output current
Leakage current
Response time
Detection voltage
temperature
coefficient
Rev.5.0
• Do not apply an electrostatic discharge to this IC that exceeds the performance ratings of the built-in
• In CMOS output products of the S-808xxC series, the through-type current flows at the detection and the
• In CMOS output products oscillation may occur when a pull-down resistor is used, and falling speed of the
• When designing for mass production using an application circuit described herein, the product deviation and
• SII claims no responsibility for any and all disputes arising out of or in connection with any infringement of the
Precautions
3. S-80846KNUA-D2CT2x, S-80846KNY-n-G
electrostatic protection circuit.
release. If the input impedance is high, oscillation may occur due to the voltage drop by the through-type
current during releasing.
power supply voltage (V
temperature characteristics should be taken into consideration. SII shall not bear any responsibility for the
products on the circuits described herein.
products including this IC upon patents owned by a third party.
DET
*1. Temperature change of the detection voltage
*2. Specified detection voltage
*3. Detection voltage temperature coefficient
Item
Δ
: Actual detection voltage value
_00
*3
−
Δ
Ta
V
DET
*1
[
mV/
°
C
Δ
SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
Ta
]
Δ
Symbol
*1
−V
V
−
I
I
V
t
LEAK
•
=
I
OUT
PLH
HYS
SS
V
DD
DD
DET
−
−
DET
V
V
) is slow near the detection voltage.
DET
DET(S)
Output transistor,
Nch, V
Output transistor,
Nch, V
(
Typ.
DET(S)
) [ ]
DD
Ta = −40 to 85 °C
DS
V
Seiko Instruments Inc.
)
= 10.0 V, V
= 0.5 V
2 *
V
Condition
DD
×
Δ
= 6.0 V
Table 20
⎯
⎯
⎯
⎯
Ta
Δ
−
•
V
V
V
−
DS
DET
V
DD
DD
DET
= 10.0 V
= 1.2 V
= 2.4 V
[
ppm/
°
C
4.500
]
0.95
0.59
2.88
Min.
3 *
⎯
⎯
⎯
⎯
⎯
(Ta = 25 °C unless otherwise specified)
÷
1000
4.600
±100
Typ.
0.05
1.36
4.98
0.9
⎯
⎯
⎯
*2
4.700
Max.
±350
0.10
10.0
S-808xxC Series
2.7
0.1
60
⎯
⎯
ppm/°C
Unit
mA
mA
μA
μA
μs
V
V
V
circuit
Test
1
1
2
1
3
3
3
1
1
29