MC79M12CDTRKG ON Semiconductor, MC79M12CDTRKG Datasheet - Page 2

• Manufacturer Part Number: MC79M12CDTRKG
• Description: IC REG VOLT NEG 500MA 12V DPAK
• Manufacturer: ON Semiconductor

Specifications of MC79M12CDTRKG

• Regulator Topology: Negative Fixed
• Voltage - Output: -12V
• Voltage - Input: Down to -35V
• Voltage - Dropout (typical): 1.1V @ 500mA
• Number Of Regulators: 1
• Current - Output: 500mA
• Operating Temperature: 0°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: TO-252-2, DPak (2 Leads + Tab), TO-252AA, SC-63
• Polarity: Negative
• Number Of Outputs: 1
• Output Type: Fixed
• Output Voltage: - 12 V
• Output Current: 0.5 A
• Line Regulation: 80 mV
• Load Regulation: 240 mV
• Dropout Voltage (max): 1.1 V
• Input Voltage Max: - 35 V
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: 0 C
• Mounting Style: SMD/SMT
• Operating Temperature Range: 0 C to + 125 C
• Output Voltage Tolerance: 4 %
• Voltage Regulation Accuracy: 4 %
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Limit (min): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MC79M12CDTRKGOS; MC79M12CDTRKGOS; MC79M12CDTRKGOSTR

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
*This device series contains ESD protection and exceeds the following tests:
MAXIMUM RATINGS
MC79M05B, C
ELECTRICAL CHARACTERISTICS
1. Load and line regulation are specified at constant temperature. Change in V
2. B = T
Input Voltage
Power Dissipation
Storage Junction Temperature
Operating Junction Temperature Range
Output Voltage (T
Line Regulation, T
Load Regulation, T
Output Voltage
Input Bias Current (T
Input Bias Current Change
Output Noise Voltage, T
Ripple Rejection (f = 120 Hz)
Dropout Voltage
Average Temperature Coefficient of Output Voltage
Human Body Model 2000 V per MIL_STD_883, Method 3015
Machine Model Method 200 V
Case 221A (TO−220−3)
Case 369C (DPAK−3)
Pulse testing with low duty cycle is used.
T
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Case
T
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Case
A
A
= 25°C
= 25°C
low
−7.0 Vdc ≥ V
−8.0 Vdc ≥ V
5.0 mA ≤ I
−7.0 Vdc ≥ V
−8.0 Vdc ≥ V
5.0 mA ≤ I
I
I
O
O
to T
= 500 mA, T
= 5.0 mA, 0°C ≤ T
high
J
J
J
= 25°C)
, −40°C < T
= 25°C (Note 1)
O
O
= 25°C (Note 1)
J
≤ 500 mA
= 25°C)
≤ 350 mA, V
I
I
I
I
A
≥ −25 Vdc
≥ −18 Vdc
≥ −25 Vdc, 5.0 mA ≤ I
≥ −25 Vdc, I
(T
J
= 25°C, 10 Hz ≤ f ≤ 100 kHz
= 25°C
A
= 25°C, unless otherwise noted.)
J
J
< 125°C C = T
≤ 125°C
Characteristic
I
= −10 V
O
= 350 mA
(V
Rating
I
= −10 V, I
O
low
≤ 350 mA
to T
high
O
= 350 mA, T
http://onsemi.com
, 0°C < T
J
2
< 125°C.
low
to T
high
O
due to heating effects must be taken into account separately.
(Note 2), unless otherwise noted.)
Symbol
DV
Reg
Reg
V
DI
RR
V
V
I
I
V
−V
O
IB
O
O
load
IB
n
/DT
line
O
Symbol
q
q
q
q
T
−4.75
P
P
V
T
−4.8
JC
JC
stg
Min
JA
JA
D
D
54
J
I
−
−
−
−
−
−
−
−
−
Internally Limited
Internally Limited
−5.0
Typ
7.0
2.0
4.3
1.1
0.2
30
40
66
−65 to +150
−40 to +150
−
−
−
Value
−35
5.0
6.0
65
92
−5.25
Max
−5.2
100
8.0
0.4
0.4
50
30
−
−
−
−
mV/°C
°C/W
°C/W
°C/W
°C/W
Unit
Vdc
Unit
Vdc
Vdc
Vdc
mV
mV
mA
mA
°C
°C
dB
W
W
mV