MCP1725-0802E/MC Microchip Technology, MCP1725-0802E/MC Datasheet - Page 22

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MCP1725-0802E/MC

Manufacturer Part Number
MCP1725-0802E/MC
Description
IC REG LDO 500MA 0.8V 8DFN
Manufacturer
Microchip Technology
Datasheet

Specifications of MCP1725-0802E/MC

Regulator Topology
Positive Fixed
Voltage - Output
0.8V
Voltage - Input
2.3 ~ 6 V
Voltage - Dropout (typical)
0.21V @ 500mA
Number Of Regulators
1
Current - Output
500mA (Min)
Operating Temperature
-40°C ~ 125°C
Mounting Type
Surface Mount
Package / Case
8-DFN
Primary Input Voltage
6V
Output Voltage Fixed
0.8V
Dropout Voltage Vdo
210mV
No. Of Pins
8
Output Current
500mA
Operating Temperature Range
-40°C To +125°C
Supply Voltage Max
6V
Number Of Outputs
1
Polarity
Positive
Input Voltage Max
6 V
Output Voltage
0.8 V
Output Type
Fixed
Dropout Voltage (max)
0.35 V at 500 mA
Line Regulation
0.05 % / V
Load Regulation
0.5 %
Voltage Regulation Accuracy
2 %
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 40 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Limit (min)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
MCP1725
5.3.2
To estimate the internal junction temperature, the
calculated temperature rise is added to the ambient or
offset temperature. For this example, the worst-case
junction temperature is estimated below:
As you can see from the result, this application will be
operating near around a junction temperature of
100°C. The PCB layout for this application is very
important as it has a significant impact on the junction-
to-ambient thermal resistance (Rθ
package, which is very important in this application.
5.3.3
From this table, you can see the difference in maximum
allowable power dissipation between the 2x3 DFN
package and the 8-pin SOIC package. This difference
is due to the exposed metal tab on the bottom of the
DFN package. The exposed tab of the DFN package
provides a very good thermal path from the die of the
LDO to the PCB. The PCB then acts like a heatsink,
providing more area to distribute the heat generated by
the LDO.
DS22026B-page 22
2x3 DFN (76°C/W Rθ
SOIC8 (163°C/Watt Rθ
P
P
P
P
D(MAX)
D(MAX)
D(MAX)
D(MAX)
T
T
T
JUNCTION TEMPERATURE
ESTIMATE
MAXIMUM PACKAGE POWER
DISSIPATION AT 60°C AMBIENT
TEMPERATURE
J
J
J
= T
= 38.8°C + 60.0°C
= 98.8°C
JRISE
=
=
=
=
(125°C – 60°C) / 76°C/W
0.855W
(125°C – 60°C)/ 163°C/W
0.399W
JA
+ T
JA
):
):
A(MAX)
JA
) of the 2x3 DFN
5.4
Where:
For a delay of 300ms,
C = 333.3E-09 *.300
C = 100E-09 µF (0.1 µF)
C
=
ΔT
ΔV
C
I
I
C
DELAY
------ -
Δ
Δ
V
T
=
=
=
=
=
(
--------------------------------- -
140nA
Calculations (typical)
C
C
140 nA typical.
time delay
C
typical
C
DELAY
DELAY
DELAY
0.42V
© 2007 Microchip Technology Inc.
=
I
Δ
threshold voltage, 0.42V
Capacitor
charging current,
T
ΔT
------ -
ΔV
)
=
333.3
×10
09
Δ
T

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