MCP1825S-3302E/AB Microchip Technology, MCP1825S-3302E/AB Datasheet - Page 8

• Manufacturer Part Number: MCP1825S-3302E/AB
• Description: IC LDO REG 500MA 3.3V TO220-3
• Manufacturer: Microchip Technology

Specifications of MCP1825S-3302E/AB

• Package / Case: TO-220-3
• Regulator Topology: Positive Fixed
• Voltage - Output: 3.3V
• Voltage - Input: Up to 6V
• Voltage - Dropout (typical): 0.21V @ 500mA
• Number Of Regulators: 1
• Current - Output: 500mA (Min)
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Through Hole
• Number Of Outputs: 1
• Polarity: Positive
• Input Voltage Max: 6 V
• Output Voltage: 3.3 V
• Output Type: Fixed
• Dropout Voltage (max): 0.35 V at 500 mA
• Output Current: 500 mA
• Line Regulation: 0.05 % / V
• Load Regulation: 0.5 %
• Voltage Regulation Accuracy: 0.5 %
• Maximum Operating Temperature: + 125 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 40 C
• Primary Input Voltage: 3.65V
• Output Voltage Fixed: 3.3V
• Dropout Voltage Vdo: 210mV
• No. Of Pins: 3
• Voltage Regulator Case Style: TO-220
• Operating Temperature Range: -40°C To +125°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Limit (min): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

MCP1825/MCP1825S
AC/DC CHARACTERISTICS (CONTINUED)
DS22056B-page 8
Electrical Specifications: Unless otherwise noted, V
I
Boldface type applies for junction temperatures, T
Dropout Characteristics
Dropout Voltage
Power Good Characteristics
PWRGD Input Voltage Operat-
ing Range
PWRGD Threshold Voltage
(Referenced to V
PWRGD Threshold Hysteresis
PWRGD Output Voltage Low
PWRGD Leakage
PWRGD Time Delay
Detect Threshold to PWRGD
Active Time Delay
Shutdown Input
Logic High Input
Logic Low Input
SHDN Input Leakage Current
AC Performance
Output Delay From SHDN
Output Noise
Note 1:
OUT
= 1 mA, C
2:
3:
4:
5:
6:
7:
Parameters
The minimum V
V
voltage for the adjustable cases. V
TCV
temperature range. V
Load regulation is measured at a constant junction temperature using low duty-cycle pulse testing. Load regulation is
tested over a load range from 1 mA to the maximum specified output current.
Dropout voltage is defined as the input-to-output voltage differential at which the output voltage drops 2% below its
nominal value that was measured with an input voltage of V
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction to air. (i.e., T
dissipation will cause the device operating junction temperature to exceed the maximum +150°C rating. Sustained
junction temperatures above 150°C can impact device reliability.
The junction temperature is approximated by soaking the device under test at an ambient temperature equal to the
desired junction temperature. The test time is small enough such that the rise in the junction temperature over the
ambient temperature is not significant.
R
IN
is the nominal regulator output voltage for the fixed cases. V
OUT
OUT
= C
)
OUT
= (V
OUT-HIGH
= 4.7 µF (X7R Ceramic), T
IN
must meet two conditions: V
OUT-LOW
– V
T
V
V
V
V
V
VDET-PWRGD
V
P
PWRGD_HYS
V
PWRGD_VIN
SHDN
OUT-LOW
PWRGD_TH
SHDN-HIGH
SHDN-LOW
DROPOUT
PWRGD_L
WRGD
Sym
T
T
e
OR
PG
is the lowest voltage measured over the temperature range.
N
_
ILK
LK
R
) *10
= V
J
6
(Note 7) of -40°C to +125°C
ADJ *
A
/ (V
IN
= +25°C.
= V
Min
-0.1
R
1.0
1.2
1.0
89
90
45
—
—
—
—
—
—
—
—
((R
* ΔTemperature). V
IN
OUT(MAX)
1
≥ 2.1V and V
/R
2
)+1).
±0.001
Typ
210
200
100
110
+ V
2.0
0.2
2.0
92
92
—
—
—
—
Figure
1
IN
DROPOUT(MAX)
IN
= V
R
4-1.
≥ V
= 1.2V, 1.8V, etc. V
OUT-HIGH
OUT(MAX)
A
, T
Max
+0.1
350
OUT(MAX)
6.0
6.0
3.0
0.4
J
95
94
15
—
—
—
—
—
—
, θ
JA
, Note 1, V
). Exceeding the maximum allowable power
is the highest voltage measured over the
+ V
%V
%V
µV/√Hz
+ V
DROPOUT(MAX)
Units
%V
%V
mV
µA
nA
µs
µs
µs
V
V
DROPOUT(MAX).
OUT
OUT
IN
IN
R
© 2008 Microchip Technology Inc.
R
is the desired set point output
= 1.8V for Adjustable Output,
Note 5, I
V
T
T
For V
Falling Edge
V
V
V
I
ADJ = 0V
V
Rising Edge
R
V
to V
V
V
V
SHDN = GND
SHDN = GND to V
V
I
C
V
PWRGD SINK
OUT
A
A
IN(MIN)
OUT
OUT
OUT
PWRGD
OUT
IN
IN
IN
OUT
OUT
PULLUP
OUT
= +25°C
= -40°C to +125°C
PWRGD_TH
= 2.1V to 6.0V
= 2.1V to 6.0V
= 6V, SHDN =V
.
= 200 mA, f = 1 kHz,
IN
< 2.5V Fixed,
= Adj.
>= 2.5V Fixed
= V
= GND to 95% V
= 2.5V
= 10 µF (X7R Ceramic),
< 2.1V, I
= 2.1V
OUT
= V
Conditions
= 10 kΩ
PWRGD_TH
IN
= 1.2 mA,
= 500 mA,
= 6.0V
- 20 mV
SINK
IN
IN
+ 20 mV
,
= 100 µA
,
R