TC1073-3.3VCH713 Microchip Technology, TC1073-3.3VCH713 Datasheet - Page 2

• Manufacturer Part Number: TC1073-3.3VCH713
• Description: IC REG LDO 3.3V 100MA SOT23A-6
• Manufacturer: Microchip Technology

Specifications of TC1073-3.3VCH713

• Regulator Topology: Positive Fixed
• Voltage - Output: 3.3V
• Voltage - Input: Up to 6V
• Voltage - Dropout (typical): 0.18V @ 100mA
• Number Of Regulators: 1
• Current - Output: 100mA (Min)
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: SOT-23-6
• Number Of Outputs: 1
• Polarity: Positive
• Input Voltage Max: 6 V
• Output Voltage: 3.3 V
• Output Type: Fixed
• Dropout Voltage (max): 250 mV
• Output Current: 100 mA
• Line Regulation: 0.05 %
• Load Regulation: 0.5 %
• Voltage Regulation Accuracy: 0.5 %
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Current - Limit (min): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 158-2019-2; 158-2019-2; TC10733.3VCH713TR

TC1072/TC1073
1.0
Absolute Maximum Ratings†
Input Voltage .........................................................6.5V
Output Voltage........................... (-0.3V) to (V
Power Dissipation................Internally Limited (Note 6)
Maximum Voltage on Any Pin ........V
Operating Temperature Range...... -40°C < T
Storage Temperature..........................-65°C to +150°C
TC1072/TC1073 ELECTRICAL SPECIFICATIONS
DS21354D-page 2
Electrical Characteristics: Unless otherwise noted, V
Boldface type specifications apply for junction temperatures of -40°C to +125°C.
V
I
V
TCV
ΔV
ΔV
V
I
I
PSRR
I
ΔV
T
ΔT
eN
Note
OUT
IN
INSD
OUT
SD
IN
OUT
IN
Symbol
SD
OUT
OUT
OUT
-V
SC
MAX
OUT
OUT
/ΔV
/V
/ΔP
1:
2:
3:
4:
5:
6:
7:
8:
9:
OUT
ELECTRICAL
CHARACTERISTICS
IN
D
V
TC V
Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range
from 0.1 mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal
regulation specification.
Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value.
Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load or
line regulation effects. Specifications are for a current pulse equal to I
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the
thermal resistance from junction-to-air (i.e., T
thermal shutdown. Please see Section 5.0 “Thermal Considerations” for more details.
Hysteresis voltage is referenced by V
Apply for Junction Temperatures of -40°C to +85°C.
The minimum V
R
is the regulator output voltage setting. For example: V
Input Operating Voltage
Maximum Output Current
Output Voltage
V
Line Regulation
Load Regulation
Dropout Voltage
Supply Current
Shutdown Supply Current
Power Supply Rejection Ratio
Output Short Circuit Current
Thermal Regulation
Thermal Shutdown Die Temperature
Thermal Shutdown Hysteresis
Output Noise
OUT
OUT
= (V
Temperature Coefficient
OUT
IN
MAX
V
Parameter
has to justify the conditions = V
OUT
– V
x ΔT
OUT
MIN
) x 10
IN
6
R
+0.3V to -0.3V
.
IN
J
A
< 125°C
, T
+ 0.3V)
J
, θ
IN
IN
JA
2.5%
V
= V
Min
100
2.7
≥ V
50
). Exceeding the maximum allowable power dissipation causes the device to initiate
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
R
–
OUT
R
R
+ V
= 2.5V, 2.7V, 2.85V, 3.0V, 3.3V, 3.6V, 4.0V, 5.0V.
+ 1V, I
DROPOUT
V
R
0.05
0.04
0.05
Typ
180
300
160
260
0.5
±0.5% V
20
40
65
85
50
64
10
—
—
—
† Note: Stresses above those listed under "Absolute
Maximum Ratings" may cause permanent damage to
the device. These are stress ratings only and functional
operation of the device at these or any other conditions
above those indicated in the operation sections of the
specifications is not implied. Exposure to Absolute
Maximum Rating conditions for extended periods may
affect device reliability.
2
L
L
MAX
= 0.1 mA, C
and V
at V
IN
IN
R
≥ 2.7V for I
Max
0.35
450
= 6V for T = 10 ms.
+ 2.5%
120
250
6.0
2.0
0.5
80
—
—
—
—
—
—
—
—
—
—
—
L
= 3.3 μF, SHDN > V
L
ppm/°C Note 2
nV/√Hz
= 0.1 mA to I
Units
V/W
mA
mA
mV
mA
µA
µA
dB
°C
°C
%
%
V
V
© 2007 Microchip Technology Inc.
Note 9
TC1072
TC1073
Note 1
(V
I
(Note 3)
I
I
I
I
TC1073
SHDN = V
SHDN = 0V
F
V
Notes 5, 6
I
470 pF from Bypass to GND
L
L
L
L
L
L
RE
OUT
R
= 0.1 mA to I
= 0.1 mA
= 20 mA
= 50 mA
= 100 mA (Note 4),
= I
OUT
+ 1V) ≤ V
OUT
≤ 1 kHz
IH
MAX
Test Conditions
= 0V
, T
.
MAX
A
IH
= +25°C.
, I
IN
L
OUT
= 0 (Note 8)
≤ 6V
MAX