BA06CC0WT Rohm Semiconductor, BA06CC0WT Datasheet - Page 7

• Manufacturer Part Number: BA06CC0WT
• Description: IC REG LDO 1A 6V SHTDN TO220FP-5
• Manufacturer: Rohm Semiconductor

Specifications of BA06CC0WT

• Regulator Topology: Positive Fixed
• Voltage - Output: 6V
• Voltage - Input: Up to 25V
• Voltage - Dropout (typical): 0.3V @ 500mA
• Number Of Regulators: 1
• Current - Output: 1A (Max)
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Through Hole
• Package / Case: TO-220-5 Full Pack (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Limit (min): -

●Vo Terminal
●Other Points of Caution
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IC
Please attach an anti-oscillation capacitor between V
due to factors such as temperature changes, making it impossible to completely stop oscillations. Please use a tantalum
capacitor or aluminum electrolysis capacitor with favorable characteristics and small internal series resistance (ESR) even at
low temperatures. The output fluctuates regardless of whether the ESR is large or small. Please use the IC within the stable
operating region while referring to the ESR characteristics reference data shown in Figs.32 through 34. In applications where
there are sudden load fluctuations, the use of a capacitor with large capacitance is recommended.
1)Protection Circuits
Over-current Protection Circuit
Thermal Shutdown Circuit (Thermal Protection)
Reverse Current
2) This IC is bipolar IC that has a P-board (substrate) and P+ isolation layer
Fig.32 Output Equivalent Circuit
A built-in over-current protection circuit corresponding to the current capacity prevents the destruction of the IC when there
are load shorts. This protection circuit is a “7”-shaped current control circuit that is designed such that the current is restricted
and does not latch even when a large current momentarily flows through the system with a high-capacitance capacitor.
However, while this protection circuit is effective for the prevention of destruction due to unexpected accidents, it is not
suitable for continuous operation or transient use. Please be aware when creating thermal designs that the overcurrent
protection circuit has negative current capacity characteristics with regard to temperature (Refer to Figs.4 and 16).
This system has a built-in temperature protection circuit for the purpose of protecting the IC from thermal damage.
As shown above, this must be used within the range of acceptable loss, but if the acceptable loss happens to be
continuously exceeded, the chip temperature Tj increases, causing the temperature protection circuit to operate.
When the thermal shutdown circuit operates, the operation of the circuit is suspended. The circuit resumes operation
immediately after the chip temperature Tj decreases, so the output repeats the ON and OFF states (Please refer to
Figs.12 and 24 for the temperatures at which the temperature protection circuit operates).
There are cases in which the IC is destroyed due to thermal runaway when it is left in the overloaded state. Be sure to
avoid leaving the IC in the overloaded state.
In order to prevent the destruction of the IC when a reverse current flows through the IC, it is recommended that a diode
be placed between the Vcc and Vo and a pathway be created so that the current can escape (Refer to Fig.35).
between each devise, as shown in Fig.36. A P-N junction is formed between
this P-layer and the N-layer of each device, and the P-N junction operates as
a parasitic diode when the electric potential relationship is GND> Terminal A,
GND> Terminal B, while it operates as a parasitic transistor when the electric
potential relationship is Terminal B GND> Terminal A. Parasitic devices are
structurally inevitable in the IC. The operation of parasitic devices induces
mutual interference between circuits, causing malfunctions and eventually
the destruction of the IC. It is necessary to be careful not to use the IC in
ways that would cause parasitic elements to operate. For example, applying
a voltage that is lower than the GND (P-board) to the input terminal.
N
(Pin B)
Parasitic element
or transistor
P+
O
Transistor (NPN)
B
E
N
N
OUT
P
GND
P
22μF
P+
Fig. 37: Example of the basic structure of a bipolar IC
N
GND
100
10
0.1
1
0
Fig.33 ESR-Io Characteristics
(Pin A)
P
N
200
P+
OUTPUT CURRENT：lo(mA)
(BA□□CC0)
Stable operating region
Unstable operating region
400
Unstable operating region
Resistor
cc
N
600
and GND. The capacitance of the capacitor may significantly change
P
GND
Parasitic element
7/9
800
P+
N
1000
10
0.1
100
1
1
(Pin B)
Fig.34 ESR vs Io Characteristics
(Pin A)
10
Unstable operating region
OUTPUT CURRENT：lo(mA)
Stable operating region
(B A□□DD0)
B
Fig. 36:Bypass diode
C
E
CTL
Vcc
GND
GND
Parasitic element
Parasitic element
or transistor
Reverse current
100
GND
Technical Note
2009.04 - Rev.A
Unstable operating region
OUT
1000