IXBOD1-32R IXYS, IXBOD1-32R Datasheet - Page 6

• Manufacturer Part Number: IXBOD1-32R
• Description: IC DIODE MODULE BOD 0.9A 3200V
• Manufacturer: IXYS

Specifications of IXBOD1-32R

• Voltage - Clamping: 3200V (3.2kV)
• Technology: Mixed Technology
• Number Of Circuits: 3
• Applications: High Voltage
• Package / Case: Radial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power (watts): -
• Voltage - Working: -

Calculation example
a. The maximum junction temperature shall be
H - 6
Application
Protection of thyristors against overvoltages in forward
direction.
calculated for a module IXBOD 1 -30R at an
ambient temperature T
decaying current I
an operating frequency f = 50 Hz and natural
convection. From the diagram Fig. 6 the energy per
pulse is obtained:
For a module IXBOD1-30R the number of single
IXBOD elements is:
At natural air cooling the thermal resistance junction
to ambient amounts to (Fig.8):
and the unknown temperature can be calculated as:
V
T
T
BO
VJmax1
VJmax1
(T
VJ
) = V
= 60 + 18 + 4.2 = 82.2°C
= T
E
n = 3
R
p1
thJA
a
BO, 25°C
+ n • f • E
= 6 x 10
TM
= 20K/W
= 40A, a pulsewidth tp = 2 s,
a
[1+KT(T
= 60 °C, an exponentially
-3
p
• R
Ws
thJA
VJ
- 25°C)]
+ K
p
• E
p
b. If following these steady-state conditions an
T
VJmax2
overload for 1 minute occurs with I
pulse-width tp = 4 s at the same operating
frequency f = 50 Hz, then the resulting maximum
junction temperature is calculating as follows:
The diagrams Fig. 11 and Fig. 8 show
From what follows:
T
which is allowed because the maximum admissible
junction temperature T
i
VJmax2
= T
= 82.2 + 14.4 + 5,6 = 102.2 °C
VJmax1
+ (E
E
Z
thJA
p2
= 14x10
p2
(t = 1min) = 12K/W
-E
p1
) • n • f •Z
VJM
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-3
= 125 °C.
Ws
thJA
TM
(t) + Kp • (E
= 60 A and a
Thyristor
BOD
V
D
p2
-E
p1
)