NUP2202W1T2G ON Semiconductor, NUP2202W1T2G Datasheet - Page 2

• Manufacturer Part Number: NUP2202W1T2G
• Description: IC DIODE/TVS ARRAY HS SOT-363
• Manufacturer: ON Semiconductor

Specifications of NUP2202W1T2G

• Voltage - Reverse Standoff (typ): 5V
• Voltage - Breakdown: 6V
• Power (watts): 500W
• Polarization: 2 Channel Array - Bidirectional
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Applications: General Purpose
• Number Of Circuits: 2
• Voltage - Working: 5V
• Voltage - Clamping: 20V
• Technology: Diode Array
• Polarity: Unidirectional
• Channels: 1 Channel
• Clamping Voltage: 20 V
• Operating Voltage: 5 V
• Breakdown Voltage: 6 V
• Termination Style: SMD/SMT
• Peak Surge Current: 28 A
• Peak Pulse Power Dissipation: 500 W
• Capacitance: 3 pF
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Dimensions: 1.25 mm W x 2 mm L
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NUP2202W1T2G; NUP2202W1T2GOSTR

ELECTRICAL CHARACTERISTICS
(T
*See Application Note AND8308/D for detailed explanations of
ELECTRICAL CHARACTERISTICS
2. TVS devices are normally selected according to the working peak reverse voltage (V
3. V
4. Nonrepetitive current pulse per Figure 5 (Pin 5 to Pin 2).
5. Surge current waveform per Figure 5.
6. For test procedure see Figures 3 and 4 and Application Note AND8307/D.
Reverse Working Voltage
Breakdown Voltage
Reverse Leakage Current
Clamping Voltage
Clamping Voltage
Maximum Peak Pulse Current
Junction Capacitance
Junction Capacitance
Clamping Voltage
Symbol
A
datasheet parameters.
V
V
P
= 25°C unless otherwise noted)
I
RWM
V
V
or continuous peak operating voltage level.
I
PP
I
I
C
BR
R
T
F
pk
C
F
BR
Figure 1. ESD Clamping Voltage Screenshot
is measured at pulse test current I
Positive 8 kV Contact per IEC61000−4−2
Parameter
Maximum Reverse Peak Pulse Current
Clamping Voltage @ I
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ V
Breakdown Voltage @ I
Test Current
Forward Current
Forward Voltage @ I
Peak Power Dissipation
Capacitance @ V
R
= 0 and f = 1.0 MHz
Parameter
F
PP
Symbol
V
T
V
RWM
I
V
V
V
C
C
I
PP
BR
R
C
C
C
J
J
(T
T
.
J
=25°C unless otherwise specified)
(Note 2)
I
V
I
I
8x20 ms Waveform (Note 4)
V
V
Per IEC 61000−4−2 (Note 6)
T
PP
PP
RWM
R
R
= 1 mA, (Note 3)
= 0 V, f = 1 MHz between I/O Pins and GND
= 0 V, f = 1 MHz between I/O Pins
= 5 A (Note 4)
= 8 A (Note 4)
= 5 V
RWM
http://onsemi.com
Conditions
2
Figure 2. ESD Clamping Voltage Screenshot
Negative 8 kV Contact per IEC61000−4−2
V
C
V
RWM
BR
V
), which should be equal or greater than the DC
RWM
Uni−Directional TVS
Min
6.0
I
F
I
I
I
I
R
T
PP
Figure 1 and 2
V
F
Typ
8.5
8.9
3.0
1.5
Max
12.5
5.0
5.0
5.0
3.0
20
28
V
Unit
mA
pF
pF
V
V
V
V
A
V