MAX6495ATT+T Maxim Integrated Products, MAX6495ATT+T Datasheet - Page 3

• Manufacturer Part Number: MAX6495ATT+T
• Description: IC CNTRLR PROT SW 6-TDFN
• Manufacturer: Maxim Integrated Products

Specifications of MAX6495ATT+T

• Package / Case: 6-TDFN Exposed Pad
• Power (watts): 1.45W
• Applications: General Purpose
• Number Of Circuits: 1
• Voltage - Working: 72V
• Technology: Mixed Technology
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Voltage - Clamping: -
• Lead Free Status / Rohs Status: Details
• Other names: MAX6495ATT+T; MAX6495ATT+TTR

ELECTRICAL CHARACTERISTICS (continued)
(V
Note 1: Specifications to T
Note 2: The MAX6495–MAX6499 power up with the external MOSFET in off mode (V
Note 3: For accurate overtemperature-shutdown performance, place the device in close thermal contact with the external MOSFET.
OVSET to GATE Propagation
Delay
UVSET to GATE, POKSET to
POK Propagation Delay
GATE Output High Voltage
GATE Output Low Voltage
GATE Charge-Pump Current
GATE to OUTFB Clamp
Voltage
IN to GATEP Output Low
Voltage
IN to GATEP Clamp Voltage
SHDN, CLEAR Logic-High
Input Voltage
SHDN, CLEAR Logic-Low
Input Voltage
SHDN Input Pulse Width
CLEAR Input Pulse Width
SHDN, CLEAR Input
Pulldown Current
Thermal Shutdown
Thermal-Shutdown
Hysteresis
POKSET to POK Delay
(MAX6497/MAX6498)
POK Output Low Voltage
(MAX6497/MAX6498)
POK Leakage Current
(MAX6497/MAX6498)
IN
= 14V, C
Limiter Controllers with an External MOSFET
PARAMETER
t
START
GATE
after all input conditions are valid.
= 6nF, T
_______________________________________________________________________________________
72V, Overvoltage-Protection Switches/
A
A
= -40°C are guaranteed by design and not production tested.
= -40°C to +125°C, unless otherwise noted. Typical values are at T
SYMBOL
V
I
GATE
V
V
CLMP
V
t
V
V
OV
OH
OL
OL
IH
IL
SET rising from V
POKSET, UVSET falling from V
V
V
V
GATE sinking 15mA, OUTFB = GND
V
GATE = GND
I
V
SHDN is Internally pulled down to GND
(Note 3)
V
V
V
GATEP
TH
OUTFB
OUTFB
IN
IN
IN
IN
POKSET
= 5.5V, GATE sinking 1mA, OUTFB = GND
= 24V, I
≥ 14V, POKSET = GND, I
≥ 2.8V, POKSET = GND, I
- 100mV
_
SINK
= V
= V
= 14V
GATEP
IN
IN,
= 75µA, I
= 5.5V, R
V
IN
CONDITIONS
TH
_
≥ 14V, R
SOURCE
- 100mV to V
GATEP
GATE
GATE
= 10µA
_
SINK
to IN = 1MΩ
SOURCE
SINK
TH
to IN = 1MΩ
TH
+ 100mV to
= 3.2mA
= 100µA
+ 100mV
= 1µA
GATE
= GND). The external MOSFET turns on
V
V
IN
IN
MIN
A
7.5
1.4
0.6
12
12
+ 3.4 V
7
= +25°C.) (Note 1)
+ 8
V
IN
IN
+160
TYP
100
0.5
1.0
20
20
35
+ 3.8 V
+ 10
V
IN
IN
MAX
11.7
100
0.6
0.9
0.4
1.4
0.4
0.4
18
18
+ 4.2
1
+ 11
UNITS
µA
µA
nA
µs
µs
µs
µs
°C
°C
µs
V
V
V
V
V
V
V
3