NUP4301MR6T1 ON Semiconductor, NUP4301MR6T1 Datasheet
NUP4301MR6T1
Specifications of NUP4301MR6T1
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NUP4301MR6T1 Summary of contents
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... NUP4301MR6T1 Low Capacitance Diode Array for ESD Protection in Four Data Lines NUP4301MR6T1 is a MicroIntegrationt device designed to provide protection for sensitive components from possible harmful electrical transients; for example, ESD (electrostatic discharge). Features • Low Capacitance (1.5 pf Maximum Between I/O Lines) • ...
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... Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 100 T = 85° 1 0.1 0.2 0.4 0.6 0 FORWARD VOLTAGE (VOLTS) F Figure 1. Forward Voltage 1.75 1.5 1.25 1.0 0.75 NUP4301MR6T1 Symbol R qJA stg (T = 25°C unless otherwise noted) (Each Diode) J Symbol V (BR Vdc Vdc 150°C) ...
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... Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. NUP4301MR6T1 PACKAGE DIMENSIONS TSOP−6 CASE 318F−05 ISSUE L NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. ...
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... USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 4 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. NUP4301MR6T1/D ...