SG-211SEE 38.4000MT3 Epson Toyocom Corporation, SG-211SEE 38.4000MT3 Datasheet

SG-211SEE 38.4000MT3

Manufacturer Part Number

SG-211SEE 38.4000MT3

Description

OSCILLATOR 38.4000 MHZ 1.8V SMD

Manufacturer

Epson Toyocom Corporation

Series

SG-211r

Type

Standardr

Datasheets

1.SG-211SDE_54.0000MT3.pdf (1 pages)

2.SG-211SDE_54.0000MT3.pdf (1 pages)

Specifications of SG-211SEE 38.4000MT3

Supply Voltage

1.8V

Frequency

38.4MHz

Frequency Stability

±15ppm

Operating Temperature

-40°C ~ 85°C

Current - Supply (max)

2.8mA

Mounting Type

Surface Mount

Size / Dimension

0.098" L x 0.079" W (2.50mm x 2.00mm)

Height

0.028" (0.70mm)

Package / Case

4-SMD, No Lead (DFN, LCC)

Supply Current

2.8mA

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

SER3703TR

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* Please contact us for inquiries regarding available frequency tolerance.

Output frequency range

Supply voltage

Temperature

Frequency tolerance *

Current consumption

Stand-by current

Symmetry

High output voltage

Low output voltage

Output load condition

Output enable /

Rise time / Fall time

Start-up time

Frequency aging

range

(CMOS)

disable input voltage

CRYSTAL OSCILLATOR

Low Profile / High stability SPXO

SG - 211 S*E

•Frequency range

•Supply voltage

•Current consumption : 3.3 mA Max.

•Function

•External dimensions : 2.5 × 2.0 × 0.7 t (mm) Typ.

Note.

Specifications (characteristics)

External dimensions

pin = HIGH : Specified frequency output.

pin = LOW : Output is high impedance, oscillation stops.

40.00T

Crystal oscillator

E933A

2.5±0.15

Item

Storage

Operating

temperature

: 2.375 MHz to 60.000 MHz

: 1.8 V Typ. / 2.5 V Typ. / 3.3 V Typ.

: Standby(

L_CMOS

(SEE 1.8 V No load condition 40 MHz)

Symbol

f_aging

T_use

T_stg

I_std

SYM

f_tol

str

)

2.3 mA Max.

2.8 mA Max.

3.3 mA Max.

4.5 mA Max.

SG-211SEE

1.6 V to 2.2 V

1.8 V Typ.

This is included in frequency tolerance specification.

Pin map

http://www.epsontoyocom.co.jp

a: ±15 × 10

Connection

D: ±20 × 10

H: ±20 × 10

2.375 MHz to 60.000 MHz

0.9

GND

OUT

-40 °C to +125 °C

-6

-40 °C to +90 °C

10 % V

20 % V

90 % V

80 % V

, b: ±20 × 10

Specifications

45 % to 55 %

5.0 µA Max.

4.5 ns Max.

15 pF Max.

2.5 mA Max.

3.0 mA Max.

3.5 mA Max.

5.0 mA Max.

SG-211SDE

5 ms Max.

0.8

2.2 V to 2.7 V

2.5 V Typ.

(Unit:mm)

-6

, E: ±15 × 10

, T: ±15 × 10

Actual size

Max.

Min.

-6

,d: ±25 × 10

-6

3.5 mA Max.

4.0 mA Max.

4.5 mA Max.

6.0 mA Max.

SG-211SCE

2.7 V to 3.6 V

Footprint (Recommended)

3.3 V Typ.

-6

To maintain stable operation, provide by-pass capacitor with

more than 0.1 μF at a location as near as possible to the power

source terminal of the crystal products (between V

Please contact us for inquiries regarding

the available frequencies.

Store as bare product after unpacking

-20 °C to +70 °C

-40 °C to +85 °C

-40 °C to +90 °C

No load condition,2.375 MHz≤f

No load condition,32 MHz<

No load condition,40 MHz<

No load condition,48 MHz<

50 % V

20 % V

L_CMOS=15 pF

t=0 at 90 % V

+25 °C, First year,

(ex. 0.01 µF)

Product Number (please contact us)

X1G0036x1xxxx00

= 4 mA

=-4 mA

=GND

terminal

= 1.8 V, 2.5 V, 3.3 V

Epson Toyocom

level,L_CMOS ≤ 15 pF

to 80 % V

1.7

Remarks

included in reflow drift

Resist

1.1

±10%

level,

- GND).

≤40 MHz

≤48 MHz

≤60 MHz

(Unit:mm)

≤32 MHz

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