IRF7401 International Rectifier, IRF7401 Datasheet - Page 5

• Manufacturer Part Number: IRF7401
• Description: MOSFET N-CH 20V 8.7A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7401

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 22 mOhm @ 4.1A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 8.7A
• Vgs(th) (max) @ Id: 700mV @ 250µA
• Gate Charge (qg) @ Vgs: 48nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1600pF @ 15V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF7401

10.0
8.0
6.0
4.0
2.0
0.0
100
0.1
10
0.0001
1
25
Fig 9. Maximum Drain Current Vs.
D = 0.50
0.20
0.10
0.05
0.02
0.01
50
T , Case Temperature ( C)
Ambient Temperature
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
C
(THERMAL RESPONSE)
0.001
75
SINGLE PULSE
100
0.01
125
°
t , Rectangular Pulse Duration (sec)
1
150
0.1
Fig 10b. Switching Time Waveforms
Fig 10a. Switching Time Test Circuit
V
90%
10%
V
DS
GS
R
Pulse Width
Duty Factor
G
t
4.5V
d(on)
1. Duty factor D = t / t
2. Peak T = P
V
Notes:
GS
1
V
t
r
DS
J
µs
DM
x Z
1
D.U.T.

thJA
P
2
IRF7401
10
DM
R
t
d(off)
+ T
D
A
t
1
t
f
t
2
+
-
V
DD
100