NDF06N62ZG ON Semiconductor, NDF06N62ZG Datasheet

MOSFET N-CH 620V 1.2OHM TO220FP

NDF06N62ZG

Manufacturer Part Number
NDF06N62ZG
Description
MOSFET N-CH 620V 1.2OHM TO220FP
Manufacturer
ON Semiconductor
Datasheet

Specifications of NDF06N62ZG

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.2 Ohm @ 3A, 10V
Drain To Source Voltage (vdss)
620V
Current - Continuous Drain (id) @ 25° C
6A
Vgs(th) (max) @ Id
4.5V @ 100µA
Gate Charge (qg) @ Vgs
32nC @ 10V
Input Capacitance (ciss) @ Vds
923pF @ 25V
Power - Max
31W
Mounting Type
Through Hole
Package / Case
TO-220FP
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.98 Ohms
Forward Transconductance Gfs (max / Min)
5 S
Drain-source Breakdown Voltage
620 V
Continuous Drain Current
3.8 A
Power Dissipation
31 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Gate Charge Qg
32 nC
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
NDF06N62ZG
NDF06N62ZGOS

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NDF06N62ZG
Manufacturer:
ON
Quantity:
2 800
NDF06N62Z, NDP06N62Z
N-Channel Power MOSFET
620 V, 0.98 W,
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Limited by maximum junction temperature
2. I
ABSOLUTE MAXIMUM RATINGS
© Semiconductor Components Industries, LLC, 2010
April, 2010 − Rev. 0
Drain−to−Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current,
Power Dissipation R
Gate−to−Source Voltage
Single Pulse Avalanche
ESD (HBM)
RMS Isolation Voltage
(t = 0.3 sec., R.H. ≤ 30%,
T
Peak Diode Recovery
Continuous Source
Maximum Temperature for
Soldering Leads
Operating Junction and
Storage Temperature Range
Low ON Resistance
Low Gate Charge
100% Avalanche Tested
These Devices are Pb−Free and RoHS Compliant
A
SD
R
R
V
Energy, I
(JESD 22−A114)
Current (Body Diode)
= 25°C) (Figure 14)
GS
qJC
qJC
= 6.0 A, di/dt ≤ 100 A/ms, V
, T
@ 10 V
Rating
A
D
= 100°C
= 6.0 A
qJC
Symbol
T
V
V
dv/dt
V
J
V
E
I
DD
P
T
, T
DSS
DM
I
I
ISO
I
esd
GS
D
D
AS
S
D
L
stg
≤ BV
(T
C
NDF06N62Z
DSS
= 25°C unless otherwise noted)
, T
4500
31
J
= +150°C
6.0 (Note 1)
3.8 (Note 1)
4.5 (Note 2)
20 (Note 1)
−55 to 150
3000
620
±30
260
113
6.0
NDP06N62Z
113
1
V/ns
Unit
mJ
°C
°C
W
V
A
A
A
V
V
V
A
NDF06N62ZG
NDP06N62ZG
CASE 221D
CASE 221A
Device
TO−220AB
TO−220FP
STYLE 1
STYLE 5
620 V
V
DSS
ORDERING INFORMATION
A
Y
WW
G
http://onsemi.com
TO−220FP
TO−220AB
(Pb−Free)
(Pb−Free)
Package
= Location Code
= Year
= Work Week
= Pb−Free Package
G (1)
Publication Order Number:
R
Gate
DS(ON)
NDF06N62ZG
NDP06N62ZG
MARKING
DIAGRAM
N−Channel
0.98 Ω
AYWW
Drain
In Development
(TYP) @ 3 A
D (2)
50 Units/Rail
50 Units/Rail
or
NDF06N62Z/D
Shipping
Source
S (3)

Related parts for NDF06N62ZG

NDF06N62ZG Summary of contents

Page 1

... CASE 221D STYLE 1 MARKING DIAGRAM NDF06N62ZG or NDP06N62ZG AYWW Gate TO−220AB CASE 221A STYLE 5 Drain A = Location Code Y = Year WW = Work Week G = Pb−Free Package ORDERING INFORMATION Device Package Shipping NDF06N62ZG TO−220FP 50 Units/Rail (Pb−Free) NDP06N62ZG TO−220AB 50 Units/Rail (Pb−Free) In Development Publication Order Number: NDF06N62Z/D S (3) Source ...

Page 2

THERMAL RESISTANCE Parameter Junction−to−Case (Drain) Junction−to−Ambient Steady State (Note 3) ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain−to−Source Leakage Current Gate−to−Source Forward Leakage ON CHARACTERISTICS (Note 4) Static Drain−to−Source On−Resistance Gate Threshold Voltage Forward Transconductance ...

Page 3

25° DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 1. On−Region Characteristics 2 1 ...

Page 4

150° 100°C J 0.1 0.01 0 100 200 300 400 V , DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 7. Drain−to−Source Leakage Current vs. Voltage ...

Page 5

... Figure 13. Thermal Impedance for NDF06N62Z Measurement made between leads and heatsink with all leads shorted together. *For additional mounting information, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. TYPICAL CHARACTERISTICS 0.001 0.01 0.1 PULSE TIME (s) ...

Page 6

... Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303− ...

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