SI8461DB-T2-E1 Vishay, SI8461DB-T2-E1 Datasheet

MOSFET P-CH D-S 20V MICROFOOT

SI8461DB-T2-E1

Manufacturer Part Number
SI8461DB-T2-E1
Description
MOSFET P-CH D-S 20V MICROFOOT
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI8461DB-T2-E1

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
100 mOhm @ 1.5A, 4.5V
Drain To Source Voltage (vdss)
20V
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
24nC @ 8V
Input Capacitance (ciss) @ Vds
610pF @ 10V
Power - Max
780mW
Mounting Type
Surface Mount
Package / Case
4-MICRO FOOT®CSP
Transistor Polarity
P Channel
Continuous Drain Current Id
-3.7A
Drain Source Voltage Vds
-20V
On Resistance Rds(on)
100mohm
Rds(on) Test Voltage Vgs
-4.5V
Threshold Voltage Vgs Typ
-1V
Resistance Drain-source Rds (on)
0.136 Ohms
Forward Transconductance Gfs (max / Min)
7 S
Drain-source Breakdown Voltage
- 20 V
Continuous Drain Current
- 3.7 A
Power Dissipation
1.8 W
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 40 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Continuous Drain (id) @ 25° C
-
Lead Free Status / Rohs Status
 Details
Other names
SI8461DB-T2-E1TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI8461DB-T2-E1
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Surface mounted on 1" x 1" FR4 board with full copper, t = 10 s.
b. Surface mounted on 1" x 1" FR4 board with minimum copper, t = 10 s.
c. Refer to IPC/JEDEC (J-STD-020C), no manual or hand soldering.
d. In this document, any reference to case represents the body of the MICRO FOOT device and foot is the bump.
e. Based on T
Document Number: 65001
S09-1502-Rev. B, 10-Aug-09
Ordering Information: Si8461DB-T2-E1 (Lead (Pb)-free and Halogen-free)
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Package Reflow Conditions
V
DS
- 20
(V)
Device Marking: 8461
Bump Side View
S
S
A
2
3
= 25 °C.
0.100 at V
0.118 at V
0.140 at V
0.205 at V
R
G
D
MICRO FOOT
DS(on)
xxx = Date/Lot Traceability Code
1
4
GS
GS
GS
GS
c
(Ω)
= - 4.5 V
= - 2.5 V
= - 1.8 V
= - 1.5 V
J
= 150 °C)
Backside View
P-Channel 20-V (D-S) MOSFET
I
D
- 3.7
- 3.4
- 3.1
(A)
- 2
a, e
A
= 25 °C, unless otherwise noted
Q
IR/Convection
9.5 nC
g
T
T
T
T
T
T
T
T
T
T
(Typ.)
A
A
A
A
C
A
A
A
A
A
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
VPR
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• Compliant to RoHS Directive 2002/95/EC
• Load Switch
• Battery Switch
• Charger Switch
Symbol
T
J
Definition
V
V
I
P
, T
DM
I
I
GS
DS
D
S
D
stg
®
Power MOSFET
G
P-Channel MOSFET
- 55 to 150
- 0.65
- 3.7
- 2.5
- 1.9
- 1.5
Limit
0.78
1.8
1.1
0.5
- 20
- 20
260
- 3
260
± 8
a
a
a
b
a
b
b
a
b
S
D
b
Vishay Siliconix
Si8461DB
www.vishay.com
Unit
°C
W
V
A
1

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SI8461DB-T2-E1 Summary of contents

Page 1

... Backside View Device Marking: 8461 xxx = Date/Lot Traceability Code Ordering Information: Si8461DB-T2-E1 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si8461DB Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter a, b Maximum Junction-to-Ambient c, d Maximum Junction-to-Ambient Notes: a. Surface mounted on 1" x 1" FR4 board with full copper. b. Maximum under steady state conditions is 100 °C/W. c. Surface mounted on 1" x 1" FR4 board with minimum copper. d. Maximum under steady state conditions is 190 °C/W. ...

Page 3

... Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 65001 S09-1502-Rev. B, 10-Aug-09 Symbol Test Conditions ° dI/dt = 100 A/µ ° Si8461DB Vishay Siliconix Min. Typ. Max. Unit - 1 0 www.vishay.com 3 ...

Page 4

... Si8461DB Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted thru 2 0.0 0.5 1.0 1 Drain-to-Source Voltage (V) DS Output Characteristics 0. 0.05 0. Drain Current (A) D On-Resistance vs. Drain Current and Gate Voltage Total Gate Charge (nC) g Gate Charge www.vishay.com 1 2.0 2.5 3 ...

Page 5

... Limited DS(on °C A Single Pulse 0.1 BVDSS Limited 0.01 0 Drain-to-Source Voltage ( > minimum V at which Safe Operating Area, Junction-to-Ambient Si8461DB Vishay Siliconix 0. 0.16 0. 125 ° 0.04 0. Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage 0.001 0.01 ...

Page 6

... Si8461DB Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Ambient Temperature (°C) A Current Derating* Note: When Mounted on 1" x 1" FR4 with Full Copper. * The power dissipation P is based dissipation limit for cases where additional heatsinking is used used to determine the current rating, when this rating falls below the package limit ...

Page 7

... Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Ambient (1" x 1" FR4 Board with Minimum Copper) Document Number: 65001 S09-1502-Rev. B, 10-Aug- Square Wave Pulse Duration ( Square Wave Pulse Duration (s) Si8461DB Vishay Siliconix Notes Duty Cycle Per Unit Base = R = 100 °C/W thJA ( ...

Page 8

... Si8461DB Vishay Siliconix PACKAGE OUTLINE MICRO FOOT: 4-BUMP ( 0.5 mm PITCH Recommended Land 8461 Mark on Backside of Die Notes (Unless otherwise specified): 1. All dimensions are in millimeters. 2. Four (4) solder bumps are lead (Pb)-free 95.5Sn/3.8Ag/0.7Cu with diameter ∅ 0. 0.32 mm. 3. Backside surface is coated with a Ti/Ni/Ag layer. ...

Page 9

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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