NSI45015WT1G ON Semiconductor, NSI45015WT1G Datasheet - Page 2

• Manufacturer Part Number: NSI45015WT1G
• Description: IC LED DRIVER LINEAR SOD-123
• Manufacturer: ON Semiconductor

Specifications of NSI45015WT1G

• Constant Current: Yes
• Topology: High Side, Linear, Low Side
• Number Of Outputs: 1
• Internal Driver: No
• Type - Primary: Automotive, Backlight
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Current - Output / Channel: 15mA
• Low Level Output Current: 12 mA
• High Level Output Current: 18 mA
• Operating Supply Voltage: 45 V
• Maximum Power Dissipation: 460 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Voltage - Supply: -
• Voltage - Output: -
• Frequency: -
• Operating Temperature: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: NSI45015WT1G; NSI45015WT1GOSTR

1. I
2. V
3. I
4. f = 1 MHz, 0.02 V RMS.
5. FR−4 @ 100 mm
6. FR−4 @ 100 mm
7. FR−4 @ 300 mm
8. FR−4 @ 300 mm
9. FR−4 @ 500 mm
10. FR−4 @ 500 mm
NOTE: Lead measurements are made by non−contact methods such as IR with treated surface to increase emissivity to 0.9.
ELECTRICAL CHARACTERISTICS
THERMAL CHARACTERISTICS
Steady State Current @ Vak = 7.5 V (Note 1)
Voltage Overhead (Note 2)
Pulse Current @ Vak = 7.5 V (Note 3)
Capacitance @ Vak = 7.5 V (Note 4)
Capacitance @ Vak = 0 V (Note 4)
Total Device Dissipation (Note 5) T
Thermal Resistance, Junction−to−Ambient (Note 5)
Thermal Reference, Lead−to−Ambient (Note 5)
Thermal Reference, Junction−to−Cathode Lead (Note 5)
Total Device Dissipation (Note 6) T
Thermal Resistance, Junction−to−Ambient (Note 6)
Thermal Reference, Lead−to−Ambient (Note 6)
Thermal Reference, Junction−to−Cathode Lead (Note 6)
Total Device Dissipation (Note 7) T
Thermal Resistance, Junction−to−Ambient (Note 7)
Thermal Reference, Lead−to−Ambient (Note 7)
Thermal Reference, Junction−to−Cathode Lead (Note 7)
Total Device Dissipation (Note 8) T
Thermal Resistance, Junction−to−Ambient (Note 8)
Thermal Reference, Lead−to−Ambient (Note 8)
Thermal Reference, Junction−to−Cathode Lead (Note 8)
Total Device Dissipation (Note 9) T
Thermal Resistance, Junction−to−Ambient (Note 9)
Thermal Reference, Lead−to−Ambient (Note 9)
Thermal Reference, Junction−to−Cathode Lead (Note 9)
Total Device Dissipation (Note 10) T
Thermal Resistance, Junction−to−Ambient (Note 10)
Thermal Reference, Lead−to−Ambient (Note 10)
Thermal Reference, Junction−to−Cathode Lead (Note 10)
Junction and Storage Temperature Range
Derate above 25°C
Derate above 25°C
Derate above 25°C
Derate above 25°C
Derate above 25°C
Derate above 25°C
reg(SS)
reg(P)
overhead
Lead temperature measurement by attaching a T/C may yield values as high as 30% higher °C/W values based upon empirical
measurements and method of attachment.
non−repetitive pulse test. Pulse width t ≤ 300 msec.
steady state is the voltage (Vak) applied for a time duration ≥ 10 sec, using FR−4 @ 300 mm
= V
in
− V
2
2
2
2
2
2
, 1 oz. copper traces, still air.
, 2 oz. copper traces, still air.
, 1 oz. copper traces, still air.
, 2 oz. copper traces, still air.
, 1 oz. copper traces, still air.
, 2 oz. copper traces, still air.
LEDs
. V
overhead
Characteristic
A
A
A
A
A
Characteristic
is typical value for 75% I
A
= 25°C
= 25°C
= 25°C
= 25°C
= 25°C
= 25°C
(T
A
= 25°C unless otherwise noted)
http://onsemi.com
reg(SS)
.
2
V
Symbol
I
overhead
reg(SS)
I
reg(P)
C
C
Symbol
T
R ψ
R ψ
R ψ
R ψ
R ψ
R ψ
R ψ
R ψ
R ψ
R ψ
R ψ
R ψ
R
R
R
R
R
R
J
P
P
P
P
P
P
, T
θ
θ
θ
θ
θ
θ
D
D
D
D
D
D
12.7
JA
JA
JA
JA
JA
JA
Min
LA
JL
LA
JL
LA
JL
LA
JL
LA
JL
LA
JL
12
stg
2
1 oz. Copper traces, in still air.
−55 to +150
16.5
Typ
1.8
2.5
5.7
15
Max
1.66
208
600
404
196
227
550
390
160
347
360
200
160
368
340
208
132
436
287
139
148
463
270
150
120
1.8
2.8
2.9
3.5
3.7
Max
19.4
18
mW/°C
mW/°C
mW/°C
mW/°C
mW/°C
mW/°C
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
Unit
mW
mW
mW
mW
mW
mW
°C
Unit
mA
mA
pF
pF
V