TC4427CPAG Microchip Technology, TC4427CPAG Datasheet - Page 3

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TC4427CPAG

Manufacturer Part Number
TC4427CPAG
Description
IC MOSFET DVR 1.5A DUAL HS 8DIP
Manufacturer
Microchip Technology
Type
Microcontrollerr
Datasheets

Specifications of TC4427CPAG

Configuration
Low-Side
Input Type
Non-Inverting
Delay Time
20ns
Current - Peak
1.5A
Number Of Configurations
2
Number Of Outputs
2
Voltage - Supply
4.5 V ~ 18 V
Operating Temperature
0°C ~ 70°C
Mounting Type
Through Hole
Package / Case
8-DIP (0.300", 7.62mm)
Rise Time
30 ns
Fall Time
30 ns
Supply Voltage (min)
4.5 V
Supply Current
4.5 mA
Maximum Power Dissipation
730 mW
Maximum Operating Temperature
+ 70 C
Mounting Style
Through Hole
Minimum Operating Temperature
0 C
Number Of Drivers
2
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
High Side Voltage - Max (bootstrap)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
1.0
Absolute Maximum Ratings †
Supply Voltage ..................................................... +22V
Input Voltage, IN A or IN B
Package Power Dissipation (T
Storage Temperature Range.............. -65°C to +150°C
Maximum Junction Temperature ...................... +150°C
† Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device. These
are stress ratings only and functional operation of the device
at these or any other conditions above those indicated in the
operation sections of the specifications is not implied.
Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability.
DC CHARACTERISTICS
© 2006 Microchip Technology Inc.
Electrical Specifications: Unless otherwise noted, T
Input
Logic ‘1’, High Input Voltage
Logic ‘0’, Low Input Voltage
Input Current
Output
High Output Voltage
Low Output Voltage
Output Resistance
Peak Output Current
Latch-Up Protection
Withstand Reverse Current
Switching Time (Note 1)
Rise Time
Fall Time
Delay Time
Delay Time
Power Supply
Power Supply Current
Note 1:
DFN .............................................................. Note 3
MSOP .......................................................... 340 mW
PDIP ............................................................ 730 mW
SOIC............................................................ 470 mW
..................................... (V
2:
3:
ELECTRICAL
CHARACTERISTICS
Parameters
Switching times ensured by design.
For V temperature range devices, the V
Package power dissipation is dependent on the copper pad area on the PCB.
DD
A
+ 0.3V) to (GND – 5V)
70°C)
Sym
V
I
V
V
V
R
I
REV
t
t
I
PK
t
t
D1
D2
I
IN
OH
OL
R
F
S
IH
IL
O
V
DD
Min
-1.0
2.4
– 0.025
IH
(Min) limit is 2.0V.
A
TC4426/TC4427/TC4428
= +25ºC with 4.5V
> 0.5
Typ
1.5
19
19
20
40
7
PIN FUNCTION TABLE
NC
IN A
GND
IN B
OUT B
V
OUT A
NC
0.025
Max
+1.0
DD
0.8
4.5
0.4
10
30
30
30
50
Name
Units
mA
ns
ns
ns
ns
V
V
V
V
A
A
A
V
DD
Note 2
0V
DC Test
DC Test
I
V
Duty cycle
V
Figure 4-1
Figure 4-1
Figure 4-1
Figure 4-1
V
V
OUT
DD
DD
IN
IN
No Connection
Input A
Ground
Input B
Output B
Supply Input
Output A
No Connection
18V.
= 3V (Both inputs)
= 0V (Both inputs)
= 18V
= 18V
V
= 10 mA, V
IN
V
DD
Conditions
2%, t
Function
DD
= 18V
DS21422D-page 3
300 s

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