MGA-412P8-TR1G Avago Technologies US Inc., MGA-412P8-TR1G Datasheet

MGA-412P8-TR1G

Manufacturer Part Number

MGA-412P8-TR1G

Description

IC PWR AMP PHEMT GAAS ENH 8-PLCC

Manufacturer

Avago Technologies US Inc.

Type

Power Amplifierr

Datasheet

1.MGA-412P8-TR1G.pdf (8 pages)

Specifications of MGA-412P8-TR1G

P1db

24dBm ~ 25.3dBm

Package / Case

8-LPCC

Current - Supply

40mA

Frequency

1.7GHz ~ 3GHz

Gain

23dB ~ 25.5dB

Rf Type

IEEE 802.11b/g, WLAN

Test Frequency

2.452GHz

Voltage - Supply

3V ~ 3.6V

Mounting Style

SMD/SMT

Technology

Power Amplifier

Number Of Channels

Operating Frequency

3000 MHz

Operating Supply Voltage

3.3 V

Maximum Power Dissipation

800 mW

Maximum Operating Temperature

+ 150 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Noise Figure

Lead Free Status / Rohs Status

Lead free / RoHS Compliant

Other names

516-1825-2
MGA-412P8-TR1G

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

MGA-412P8-TR1G

Manufacturer:

AVAGO/安华高

Quantity:

20 000

Current page: 1 of 8
Download datasheet (247Kb)

MGA-412P8

GaAs Enhancement-mode pHEMT Power Amplifier

optimized for IEEE 802.11b/g applications

Data Sheet

Description

Avago Technologies’s MGA-412P8 linear power am-

plifier is designed for applications in the (1.7-3) GHz

frequency range. The amplifier is optimized for IEEE

802.11b/g WLAN applications and has a best-in-class

efficiency (PAE) of 25.5% (54Mbps OFDM) achieved

through the use of Avago Technologies’ proprietary

GaAs Enhancement-mode pHEMT process.

The MGA-412P8 is housed in a miniature 2.0 x 2.0 x

0.75mm

package. The compact footprint, low profile and excellent

thermal efficiency of the LPCC package makes the MGA-

412P8 an ideal choice as a power amplifier for mobile IEEE

802.11b/g WLAN applications.

It achieves +19.0 dBm linear output power that meets 3%

EVM at 54Mbps data rate (OFDM Modulation), and 23dBm

at 11Mbps (CCCK modulation).

Component Image

Note:

Package marking provides Orientation and Identification

"1C" = Product Code

"X" = Date code indicates month of manufacture

8-lead leadless-plastic-chip-carrier (LPCC)

4:Vdd1

2:RFin

2:Gnd

1:Gnd

Pin 8

Pin 7

Pin 6

Pin 5

2.0 x 2.0 x 0.75 mm

8-lead LPCC

Bottom View

Top View

1CX

7:RFout

6:Vdd2

Pin 2

Pin 3

8:Det

5:Pwr Down

Pin 1

Pin 4

Features

• Advanced GaAs E-pHEMT

• Integrated power detector & power down functions

• High efficiency

• Single +3.3V Supply

• Small Footprint: 2x2mm

• Low Profile: 0.8mm max.

Specifications

• At 2.452 GHz; 3.3V (Typ.) :

• Gain: 25.5 dB

• P1dB: 25.3 dBm

• Pout linear with IEEE 802.11g OFDM modulation

• Current @19dBm linear Pout: (54Mbps) : 95mA

• Reverse Isolation (typ): > 40dB

• Quiescent current (typ): 40mA

• Meets IEEE 802.11b @11Mbps (CCCK modulation)

Applications

• Power Amplifier for IEEE 802.11b/g WLAN applica-

• Bluetooth Power Amplifier

• 2.4GHz ISM band applications

@54Mbps data rate: 19.0 dBm @ 3% EVM.

with Pout: 23dBm while consuming 200mA.

tions

Attention: Observe precautions for

handling electrostatic sensitive devices.

ESD Machine Model = 50 V

ESD Human Body Model = 200 V

Refer to Avago Technologies Application

Note A004R: Electrostatic Discharge,

Damage and Control.

Related parts for MGA-412P8-TR1G

MGA-412P8-TR1G Summary of contents

Page 1

... WLAN applications and has a best-in-class efficiency (PAE) of 25.5% (54Mbps OFDM) achieved through the use of Avago Technologies’ proprietary GaAs Enhancement-mode pHEMT process. The MGA-412P8 is housed in a miniature 2 0.75mm 8-lead leadless-plastic-chip-carrier (LPCC) package. The compact footprint, low profile and excellent ...

Page 2

Absolute Maximum Rating Tc=25°C Symbol Parameter V Device Voltage, RF output to ground Input Power (Vdd = 3.3V) in [2] P Total Power Dissipation diss T Junction Temperature j T Storage Temperature STG Product Consistency ...

Page 3

Electrical Specifications °C, 2.452 GHz [typical, measured on demo board].DC bias for RF parameters Vdd =Vsd=3.3V Unless otherwise specified, all data are taken with OFDM 64-QAM modulated signal per IEEE802.11g specifications at 54Mbps data rate. Symbol ...

Page 4

Demo board Diagram 5.6nH 6.8pF INPUT OCT 2005 Rev 1.1 Figure 4. Demo board and Application Circuit Components 4 DET 0ohm 5.6nH 6.8pF 1.2pF 1.5pF 0.4mm 5.6nH 1000pF 0.56mm 0ohm 2.2uF 22ohm 1000pF Vdd 18nH SD OUTPUT 0.1uF ...

Page 5

Schematic Diagram L=5.6 nH L=5 Input ort C=6 TLIN TL1 Vshutdown = +3.3V ON Vshutdown =0V OFF Figure 5. Demo Board Schematic Diagram * 0.56mm ...

Page 6

... Pout and Gain vs Pin 30 25 Pout 20 Gain -25 -20 -15 -10 Input Power (dBm) Figure 6. Output Power and Gain vs Input Power MGA-412P8 Typical Performance +25 °C, Vdd = 3.3V Input Signal=OFDM signal with 54Mbps, Modulation=64QAM unless stated otherwise. EVM & Current vs Modulated Pout EVM 9 Current ...

Page 7

EVM vs Modulated Output Power Deg -40 Deg Deg Modulated Output Power (dBm) Figure 12. ...

Page 8

... USER FEED DIRECTION COVER TAPE Part Number Ordering Information Part Number No. of Devices MGA-412P8-TR1G 3000 MGA-412P8-TR2G 10000 MGA-412P8-BLKG 100 For product information and a complete list of distributors, please go to our web site: Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries. ...

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