SGA-2263Z Sirenza Microdevices Inc, SGA-2263Z Datasheet - Page 2

• Manufacturer Part Number: SGA-2263Z
• Description: IC AMP HBT SIGE 5000MHZ SOT-363
• Manufacturer: Sirenza Microdevices Inc

Specifications of SGA-2263Z

• Current - Supply: 17mA ~ 23mA
• Frequency: 0Hz ~ 5GHz
• Gain: 13.5dB
• Noise Figure: 3.5dB
• P1db: 6.1dBm
• Package / Case: SC-70-6, SC-88, SOT-363
• Rf Type: Cellular, GSM, PCS, UMTS
• Test Frequency: 1.95GHz
• Voltage - Supply: 1.9V ~ 2.5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 599-1014-2

SGA-2263(Z)
Typical Performance at Key Operating Frequencies
2 of 6
Absolute Maximum Ratings
Max Device Current (I
Max Device Voltage (V
Max RF Input Power
Max Junction Temp (T
Operating Temp Range (T
Max Storage Temp
Operation of this device beyond any one of these limits may cause permanent dam-
Bias Conditions should also satisfy the following expression:
Test Conditions: V
Output Power at 1dB Compression
Output Third Order Intercept Point
age. For reliable continuous operation, the device voltage and current must not
exceed the maximum operating values specified in the table on page one.
I
D
V
D
<(T
Output Return Loss
Small Signal Gain
Input Return Loss
Reverse Isolation
Parameter
J
Noise Figure
Parameter
-T
30
25
20
15
10
L
)/R
0
S
TH
=5V, I
, j-l
D
J
D
)
)
)
0.5
D
L
)
=20mA Typ., OIP
OIP
V
D
1
= 2.2 V, I
Frequency (GHz)
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support, contact RFMD at ([phone] or [e-mail].
3
vs. Frequency
1.5
Unit
dBm
dBm
3
dB
dB
dB
dB
dB
Tone Spacing=1MHz, P
D
= 20 mA
-40 to +85
Rating
2
+150
+150
+18
5
4
3
2
1
0
40
4
0
T
100MHz
L
=+25ºC
2.5
21.3
24.1
17.8
Noise Figure vs. Frequency
0.5
OUT
3
V
D
per tone=-10dBm, R
500MHz
= 2.2 V, I
1
Frequency (GHz)
Unit
dBm
mA
°C
14.9
20.4
21.5
23.0
18.5
°C
°C
V
7.6
3.3
1.5
D
= 20 mA
10
8
6
4
2
0
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
850MHz
0
2
14.7
20.2
19.6
18.7
27.8
BIAS
3.2
7.5
T
=140Ω, T
Caution! ESD sensitive device.
0.5
L
=+25ºC
2.5
P
V
1dB
1950MHz 2400MHz 3500MHz
D
= 2.2 V, I
L
1
Frequency (GHz)
=25°C, Z
vs. Frequency
13.5
18.0
25.3
19.1
17.6
3.5
3
6.1
1.5
D
= 20 mA
S
=Z
L
=50Ω
2
13.2
16.9
23.4
19.2
17.2
5.4
4.0
T
L
2.5
=+25ºC
DS090924
3
15.0
26.7
19.2