IC AMP HBT SIGE 4500MHZ SOT-86

SGA-6486Z

Manufacturer Part NumberSGA-6486Z
DescriptionIC AMP HBT SIGE 4500MHZ SOT-86
ManufacturerSirenza Microdevices Inc
SGA-6486Z datasheet
 


Specifications of SGA-6486Z

Current - Supply67mA ~ 83mAFrequency0Hz ~ 4.5GHz
Gain14.8dBNoise Figure18dB
P1db18.5dBmPackage / CaseSOT-86
Rf TypeCellular, GSM, PCS, UMTSTest Frequency1.95GHz
Voltage - Supply4.7V ~ 5.5VLead Free Status / RoHS StatusLead free / RoHS Compliant
Other names599-1050-2  
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SGA-6486(Z)
Absolute Maximum Ratings
Parameter
Max Device Current (I
)
D
Max Device Voltage (V
)
D
Max RF Input Power
Max Junction Temp (T
)
J
Operating Temp Range (T
)
L
Max Storage Temp
Operation of this device beyond any one of these limits may cause permanent dam-
age. For reliable continuous operation, the device voltage and current must not
exceed the maximum operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
I
V
<(T
-T
)/R
, j-l
D
D
J
L
TH
Typical Performance at Key Operating Frequencies
Parameter
Small Signal Gain
Output Third Order Intercept Point
Output Power at 1dB Compression
Input Return Loss
Output Return Loss
Reverse Isolation
Noise Figure
Test Conditions: V
=8V, I
=75mA Typ., OIP
Tone Spacing=1MHz, P
S
D
3
OIP
vs. Frequency
3
V
= 5.1 V, I
= 75 mA
D
D
40
36
32
28
+25°C
T
24
-40°C
L
+85°C
20
0.0
0.5
1.0
1.5
2.0
Frequency (GHz)
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
2 of 6
Rating
Unit
150
mA
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
7
V
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
+18
dBm
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
+150
°C
The information in this publication is believed to be accurate and reliable. However, no
-40 to +85
°C
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
+150
°C
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
Unit
100
500
MHz
MHz
dB
21.0
20.3
dBm
35.0
35.3
dBm
20.2
20.3
dB
32.2
23.3
dB
16.8
18.2
dB
24.0
23.9
dB
3.2
2.9
per tone=0dBm, R
=39Ω, T
OUT
BIAS
22
20
18
16
14
12
2.5
3.0
3.5
0.0
0.5
Noise Figure vs. Frequency
V
= 5.1 V, I
= 75 mA
D
D
5
4
3
2
T
L
1
0
0
1
2
3
Frequency (GHz)
Caution! ESD sensitive device.
850
1950
2400
3500
MHz
MHz
MHz
19.7
16.4
14.8
35.0
32.0
31.0
20.2
18.5
17.5
22.8
21.4
17.4
23.0
18.0
17.4
23.6
21.2
19.7
3.0
3.3
3.7
=25°C, Z
=Z
=50Ω
L
S
L
P
vs. Frequency
1dB
V
= 5.1 V, I
= 75 mA
D
D
+25°C
T
-40°C
L
+85°C
1.0
1.5
2.0
2.5
3.0
3.5
Frequency (GHz)
=+25ºC
4
EDS-100615 Rev G
MHz
12.3
26.5
14.7
14.4
14.2
16.6
4.4