MGA-68563-BLKG Avago Technologies US Inc., MGA-68563-BLKG Datasheet - Page 2

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MGA-68563-BLKG

Manufacturer Part Number
MGA-68563-BLKG
Description
IC AMP LNA MMIC GAAS SMD SOT-363
Manufacturer
Avago Technologies US Inc.
Datasheet

Specifications of MGA-68563-BLKG

Gain
19.7dB
Current - Supply
16mA
Frequency
100MHz ~ 1.5GHz
Noise Figure
1dB
P1db
17.5dBm
Package / Case
SC-70-6, SC-88, SOT-363
Test Frequency
500MHz
Voltage - Supply
3V
Frequency Range
0.1GHz To 1.5GHz
Noise Figure Typ
1dB
Power Dissipation Pd
600mW
Supply Current
11mA
Rf Type
DAB, DVB-H, DVB-T, ISDB-T, Media-FLO, T-DMB
Manufacturer's Type
Low Noise Amplifier
Number Of Channels
1
Frequency (max)
1.5GHz
Operating Supply Voltage (typ)
3V
Package Type
SOT-363
Mounting
Surface Mount
Pin Count
6
Noise Figure (typ)
1@500MHzdB
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
516-2129

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MGA-68563-BLKG
Manufacturer:
AVAGO
Quantity:
67 000
Part Number:
MGA-68563-BLKG
Manufacturer:
AVAGO/安华高
Quantity:
20 000
Pin Connections and Package Marking
MGA-68563 Absolute Maximum Ratings
Figure 1a. Test circuit of the 0.5 GHz production test board used for NF, Gain
and OIP3 measurements. This circuit achieves a trade-off between optimal
NF, Gain, OIP3 and input return loss. Circuit losses have been de-embedded
from actual measurements.
2
INPUT
Symbol
V
I
P
I
P
T
T
θ
GND
GND
d
ref
CH
d
in
diss
STG
ch_b
100 pF
1
2
3
6.8 nH
Parameter
Device Voltage (pin 6)
Device Current (pin 6)
CW RF Input (pin3)
(Vd=3V, Id=10mA)
(Vd=0V, Id=0mA)
Bias Reference Current (pin 4)
Total Power Dissipation
Channel Temperature
Storage Temperature
Thermal Resistance
+
3
4300 Ω
3V
1 2 5
MGA-68563
4
6
5
4 BIAS
[3]
OUTPUT
and V
GND
[5]
[1]
[2]
[2]
6
d
[4]
47 nH
Note:
Package marking
provides orientation
and identification:
“6C” = Device Code
“x” = Date code
indicates the month
of
ture.
10 nF
68 pF
100 pF
Units
V
mA
dBm
dBm
mA
mW
°C
°C
°C/W
manufac-
Absolute
Maximum
6
100
21
21
1
600
150
150
97
Simplified Schematic
RF Output
Figure 1b. A diagram showing the connection to the DUT during an S and
Noise parameter measurement using an automated tuner system.
RFin
Direct to
Ground
match
Vdd supply from
Input
Agilent 4142
Wire Supplying
Vbias from
Agilent 4142
Bias
Bias
R
V
Tee
bias
bias
4
3
Notes:
1. Operation of this device above any one of
2. Bias is assumed at DC quiescent conditions.
3. With the DC (typical bias) and RF applied to
4. Total dissipation power is referred to lead
5. Thermal resistance measured using 150°C
these parameters may cause permanent
damage.
the device at board temperature TB = 25°C.
“5” temperature. Tc=92°C, derate Pdiss at
10.3mW/°C for Tc>92°C.
Liquid Crystal Measurement method.
Bias
Reference
Planes
I
GND
bias
1, 2, 5
Feedback
Blocking
Cap
6
Vd
Id = I
I
ds
Direct to
Ground
ds
Input
RF
+ I
RFout
bias

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